JPS56160070A - Manufacture of insulated gate type field effect transistor - Google Patents
Manufacture of insulated gate type field effect transistorInfo
- Publication number
- JPS56160070A JPS56160070A JP5389480A JP5389480A JPS56160070A JP S56160070 A JPS56160070 A JP S56160070A JP 5389480 A JP5389480 A JP 5389480A JP 5389480 A JP5389480 A JP 5389480A JP S56160070 A JPS56160070 A JP S56160070A
- Authority
- JP
- Japan
- Prior art keywords
- source
- alloy
- substrate
- region
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 abstract 5
- 239000000956 alloy Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent the injection of a carrier and obtain high withstand voltage by a method wherein an Al electrode on a source region formed shallower than a drain region is alloy heat-treated and an alloy spike is grown to permit a source and a substrate to electrically be connected. CONSTITUTION:The drain region 2 is diffused in the P type silicon substrate 1 and continuously, the source region 3 of a diffusion depth shallower than the drain region 2 is formed. Then, a gate electrode 6 is formed using a polycrystalline silicon and phosphorus is ion-injected to form an offset gate region 4. Then, a protective film 10 of phosphorus glass is formed, an electrode window is formed, aluminum is evaporated and the electrodes 7, 8 are formed by a photoetching method. Subsequently, the alloy heat treatment is applied at the temperature of 550 deg.C for an hour in the hydrogen atmosphere. A part of a source alloy layer 11 is connected to the semiconductor substrate by the alloy spike phenomenon and the like to prevent the injection of the carrier from the source to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5389480A JPS56160070A (en) | 1980-04-23 | 1980-04-23 | Manufacture of insulated gate type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5389480A JPS56160070A (en) | 1980-04-23 | 1980-04-23 | Manufacture of insulated gate type field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56160070A true JPS56160070A (en) | 1981-12-09 |
Family
ID=12955425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5389480A Pending JPS56160070A (en) | 1980-04-23 | 1980-04-23 | Manufacture of insulated gate type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56160070A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10320414A1 (en) * | 2003-05-07 | 2004-12-23 | Infineon Technologies Ag | Semiconductor arrangement has integrated structure surrounded by protective structure to prevent diffusion of minority carriers and a contact to the substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5287373A (en) * | 1976-01-17 | 1977-07-21 | Nec Corp | Production of semiconductor device |
| JPS52122482A (en) * | 1976-04-07 | 1977-10-14 | Sanyo Electric Co Ltd | Semiconductor device |
| JPS53980A (en) * | 1977-07-13 | 1978-01-07 | Hitachi Ltd | Field-effect transistor of high dielectric strength |
| JPS5371573A (en) * | 1976-12-08 | 1978-06-26 | Hitachi Ltd | Field effect transistor of isolating gate type |
-
1980
- 1980-04-23 JP JP5389480A patent/JPS56160070A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5287373A (en) * | 1976-01-17 | 1977-07-21 | Nec Corp | Production of semiconductor device |
| JPS52122482A (en) * | 1976-04-07 | 1977-10-14 | Sanyo Electric Co Ltd | Semiconductor device |
| JPS5371573A (en) * | 1976-12-08 | 1978-06-26 | Hitachi Ltd | Field effect transistor of isolating gate type |
| JPS53980A (en) * | 1977-07-13 | 1978-01-07 | Hitachi Ltd | Field-effect transistor of high dielectric strength |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10320414A1 (en) * | 2003-05-07 | 2004-12-23 | Infineon Technologies Ag | Semiconductor arrangement has integrated structure surrounded by protective structure to prevent diffusion of minority carriers and a contact to the substrate |
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