JPS5683076A - High tension mos field-effect transistor - Google Patents

High tension mos field-effect transistor

Info

Publication number
JPS5683076A
JPS5683076A JP16069279A JP16069279A JPS5683076A JP S5683076 A JPS5683076 A JP S5683076A JP 16069279 A JP16069279 A JP 16069279A JP 16069279 A JP16069279 A JP 16069279A JP S5683076 A JPS5683076 A JP S5683076A
Authority
JP
Japan
Prior art keywords
region
insulating film
high resistance
resistance layer
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16069279A
Other languages
Japanese (ja)
Other versions
JPS6350871B2 (en
Inventor
Kiyotoshi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16069279A priority Critical patent/JPS5683076A/en
Priority to DE3046749A priority patent/DE3046749C2/en
Publication of JPS5683076A publication Critical patent/JPS5683076A/en
Priority to US06/655,638 priority patent/US4614959A/en
Publication of JPS6350871B2 publication Critical patent/JPS6350871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the effects of external electric charges and improve reliability by covering a section on a high resistance layer region with a conductor through an insulating film approximately complete. CONSTITUTION:A source region 2, a drain region 3, a P<+> channel region 4 and an N<-> high resistance layer 5 are formed, a source electrode 6 is electrically connected to the source region 2 and a drain electrode 7 to the drain region 3, and the other surfaces of a substrate are coated with an insulating film 8. A gate electrode 9 is made up on a gate oxide film with fixed thickness on the channel region 4. A floating conductor 10 is built up on the insulating film covered on the high resistance layer region 5 not coated with a field plate extending from both sides.
JP16069279A 1979-12-10 1979-12-10 High tension mos field-effect transistor Granted JPS5683076A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP16069279A JPS5683076A (en) 1979-12-10 1979-12-10 High tension mos field-effect transistor
DE3046749A DE3046749C2 (en) 1979-12-10 1980-12-10 MOS transistor for high operating voltages
US06/655,638 US4614959A (en) 1979-12-10 1984-09-28 Improved high voltage MOS transistor with field plate layers for preventing reverse field plate effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16069279A JPS5683076A (en) 1979-12-10 1979-12-10 High tension mos field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5683076A true JPS5683076A (en) 1981-07-07
JPS6350871B2 JPS6350871B2 (en) 1988-10-12

Family

ID=15720396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16069279A Granted JPS5683076A (en) 1979-12-10 1979-12-10 High tension mos field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5683076A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04107875A (en) * 1990-08-27 1992-04-09 Matsushita Electron Corp Semiconductor device and high side switching device using it
JPH0645530A (en) * 1984-01-23 1994-02-18 Internatl Rectifier Corp Bidirectional-continuity insulated-gate field-effect transistor
US6172400B1 (en) * 1998-04-27 2001-01-09 Spectrian Corporation MOS transistor with shield coplanar with gate electrode
US6989566B2 (en) 2001-06-04 2006-01-24 Matsushita Electric Industrial Co., Ltd. High-voltage semiconductor device including a floating block
JP2010157582A (en) * 2008-12-26 2010-07-15 Rohm Co Ltd Semiconductor device
JP2010157760A (en) * 2010-03-01 2010-07-15 Mitsubishi Electric Corp Semiconductor device
JP2011040773A (en) * 2010-10-04 2011-02-24 Mitsubishi Electric Corp Semiconductor device
JP2013093482A (en) * 2011-10-27 2013-05-16 Renesas Electronics Corp Semiconductor device and semiconductor device manufacturing method
US10199483B2 (en) 2016-05-26 2019-02-05 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53980A (en) * 1977-07-13 1978-01-07 Hitachi Ltd Field-effect transistor of high dielectric strength

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53980A (en) * 1977-07-13 1978-01-07 Hitachi Ltd Field-effect transistor of high dielectric strength

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645530A (en) * 1984-01-23 1994-02-18 Internatl Rectifier Corp Bidirectional-continuity insulated-gate field-effect transistor
JPH04107875A (en) * 1990-08-27 1992-04-09 Matsushita Electron Corp Semiconductor device and high side switching device using it
US6172400B1 (en) * 1998-04-27 2001-01-09 Spectrian Corporation MOS transistor with shield coplanar with gate electrode
US6989566B2 (en) 2001-06-04 2006-01-24 Matsushita Electric Industrial Co., Ltd. High-voltage semiconductor device including a floating block
JP2010157582A (en) * 2008-12-26 2010-07-15 Rohm Co Ltd Semiconductor device
JP2010157760A (en) * 2010-03-01 2010-07-15 Mitsubishi Electric Corp Semiconductor device
JP2011040773A (en) * 2010-10-04 2011-02-24 Mitsubishi Electric Corp Semiconductor device
JP2013093482A (en) * 2011-10-27 2013-05-16 Renesas Electronics Corp Semiconductor device and semiconductor device manufacturing method
US10199483B2 (en) 2016-05-26 2019-02-05 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JPS6350871B2 (en) 1988-10-12

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