JPS5435757B2 - - Google Patents

Info

Publication number
JPS5435757B2
JPS5435757B2 JP1761774A JP1761774A JPS5435757B2 JP S5435757 B2 JPS5435757 B2 JP S5435757B2 JP 1761774 A JP1761774 A JP 1761774A JP 1761774 A JP1761774 A JP 1761774A JP S5435757 B2 JPS5435757 B2 JP S5435757B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1761774A
Other languages
Japanese (ja)
Other versions
JPS50114182A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1761774A priority Critical patent/JPS5435757B2/ja
Publication of JPS50114182A publication Critical patent/JPS50114182A/ja
Publication of JPS5435757B2 publication Critical patent/JPS5435757B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP1761774A 1974-02-15 1974-02-15 Expired JPS5435757B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1761774A JPS5435757B2 (en) 1974-02-15 1974-02-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1761774A JPS5435757B2 (en) 1974-02-15 1974-02-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP8296777A Division JPS53980A (en) 1977-07-13 1977-07-13 Field-effect transistor of high dielectric strength

Publications (2)

Publication Number Publication Date
JPS50114182A JPS50114182A (en) 1975-09-06
JPS5435757B2 true JPS5435757B2 (en) 1979-11-05

Family

ID=11948825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1761774A Expired JPS5435757B2 (en) 1974-02-15 1974-02-15

Country Status (1)

Country Link
JP (1) JPS5435757B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
JPS5371573A (en) * 1976-12-08 1978-06-26 Hitachi Ltd Field effect transistor of isolating gate type
JPS54116885A (en) * 1978-03-03 1979-09-11 Hitachi Ltd Field effect transistor of insulation gate type and its manufacture
JPS54121681A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Nis-type semiconductor device
JPS54152978A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Manufacture of insulation-gate type field effect transistor
CA1142271A (en) * 1979-03-28 1983-03-01 Thomas E. Hendrickson Field effect semiconductor device
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic
JPH0349265A (en) * 1989-07-17 1991-03-04 Fuji Electric Co Ltd Field effect trasistor
JPH02197166A (en) * 1989-10-20 1990-08-03 Seiko Epson Corp High breakdown strength mos type semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844056A (en) * 1971-10-08 1973-06-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844056A (en) * 1971-10-08 1973-06-25

Also Published As

Publication number Publication date
JPS50114182A (en) 1975-09-06

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