JPS5426667A - Measuring method for various parameters of field effect transistor - Google Patents

Measuring method for various parameters of field effect transistor

Info

Publication number
JPS5426667A
JPS5426667A JP9174277A JP9174277A JPS5426667A JP S5426667 A JPS5426667 A JP S5426667A JP 9174277 A JP9174277 A JP 9174277A JP 9174277 A JP9174277 A JP 9174277A JP S5426667 A JPS5426667 A JP S5426667A
Authority
JP
Japan
Prior art keywords
various parameters
field effect
effect transistor
measuring method
diffusion hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9174277A
Other languages
Japanese (ja)
Other versions
JPS5953702B2 (en
Inventor
Kazuo Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9174277A priority Critical patent/JPS5953702B2/en
Publication of JPS5426667A publication Critical patent/JPS5426667A/en
Publication of JPS5953702B2 publication Critical patent/JPS5953702B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain various parameters such as effective channel length, by making calculation according to equation with the total resistance value between the source and the drain when a voltage is applied to the gate electrode, and with the actual distance between the source electrode diffusion hole and the drain electrode diffusion hole.
COPYRIGHT: (C)1979,JPO&Japio
JP9174277A 1977-07-29 1977-07-29 How to measure the specifications of field effect transistors Expired JPS5953702B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9174277A JPS5953702B2 (en) 1977-07-29 1977-07-29 How to measure the specifications of field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9174277A JPS5953702B2 (en) 1977-07-29 1977-07-29 How to measure the specifications of field effect transistors

Publications (2)

Publication Number Publication Date
JPS5426667A true JPS5426667A (en) 1979-02-28
JPS5953702B2 JPS5953702B2 (en) 1984-12-26

Family

ID=14034971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9174277A Expired JPS5953702B2 (en) 1977-07-29 1977-07-29 How to measure the specifications of field effect transistors

Country Status (1)

Country Link
JP (1) JPS5953702B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5733056A (en) * 1980-08-01 1982-02-23 Akebono Brake Ind Co Ltd Oil pressure control device for car brake system
US5504437A (en) * 1994-07-25 1996-04-02 Dainippon Screen Mfg. Co., Ltd. Apparatus and method for electrical measurement of semiconductor wafers
US6518592B1 (en) 2000-05-01 2003-02-11 Mitsubushi Denki Kabushiki Kaisha Apparatus, method and pattern for evaluating semiconductor device characteristics
JP2005005691A (en) * 2003-05-16 2005-01-06 Semiconductor Energy Lab Co Ltd Method for evaluating field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5733056A (en) * 1980-08-01 1982-02-23 Akebono Brake Ind Co Ltd Oil pressure control device for car brake system
US5504437A (en) * 1994-07-25 1996-04-02 Dainippon Screen Mfg. Co., Ltd. Apparatus and method for electrical measurement of semiconductor wafers
US6518592B1 (en) 2000-05-01 2003-02-11 Mitsubushi Denki Kabushiki Kaisha Apparatus, method and pattern for evaluating semiconductor device characteristics
US6779160B2 (en) 2000-05-01 2004-08-17 Renesas Technology Corp. Apparatus, method and pattern for evaluating semiconductor device characteristics
JP2005005691A (en) * 2003-05-16 2005-01-06 Semiconductor Energy Lab Co Ltd Method for evaluating field effect transistor

Also Published As

Publication number Publication date
JPS5953702B2 (en) 1984-12-26

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