JPS5426667A - Measuring method for various parameters of field effect transistor - Google Patents
Measuring method for various parameters of field effect transistorInfo
- Publication number
- JPS5426667A JPS5426667A JP9174277A JP9174277A JPS5426667A JP S5426667 A JPS5426667 A JP S5426667A JP 9174277 A JP9174277 A JP 9174277A JP 9174277 A JP9174277 A JP 9174277A JP S5426667 A JPS5426667 A JP S5426667A
- Authority
- JP
- Japan
- Prior art keywords
- various parameters
- field effect
- effect transistor
- measuring method
- diffusion hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain various parameters such as effective channel length, by making calculation according to equation with the total resistance value between the source and the drain when a voltage is applied to the gate electrode, and with the actual distance between the source electrode diffusion hole and the drain electrode diffusion hole.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9174277A JPS5953702B2 (en) | 1977-07-29 | 1977-07-29 | How to measure the specifications of field effect transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9174277A JPS5953702B2 (en) | 1977-07-29 | 1977-07-29 | How to measure the specifications of field effect transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5426667A true JPS5426667A (en) | 1979-02-28 |
JPS5953702B2 JPS5953702B2 (en) | 1984-12-26 |
Family
ID=14034971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9174277A Expired JPS5953702B2 (en) | 1977-07-29 | 1977-07-29 | How to measure the specifications of field effect transistors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5953702B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5733056A (en) * | 1980-08-01 | 1982-02-23 | Akebono Brake Ind Co Ltd | Oil pressure control device for car brake system |
US5504437A (en) * | 1994-07-25 | 1996-04-02 | Dainippon Screen Mfg. Co., Ltd. | Apparatus and method for electrical measurement of semiconductor wafers |
US6518592B1 (en) | 2000-05-01 | 2003-02-11 | Mitsubushi Denki Kabushiki Kaisha | Apparatus, method and pattern for evaluating semiconductor device characteristics |
JP2005005691A (en) * | 2003-05-16 | 2005-01-06 | Semiconductor Energy Lab Co Ltd | Method for evaluating field effect transistor |
-
1977
- 1977-07-29 JP JP9174277A patent/JPS5953702B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5733056A (en) * | 1980-08-01 | 1982-02-23 | Akebono Brake Ind Co Ltd | Oil pressure control device for car brake system |
US5504437A (en) * | 1994-07-25 | 1996-04-02 | Dainippon Screen Mfg. Co., Ltd. | Apparatus and method for electrical measurement of semiconductor wafers |
US6518592B1 (en) | 2000-05-01 | 2003-02-11 | Mitsubushi Denki Kabushiki Kaisha | Apparatus, method and pattern for evaluating semiconductor device characteristics |
US6779160B2 (en) | 2000-05-01 | 2004-08-17 | Renesas Technology Corp. | Apparatus, method and pattern for evaluating semiconductor device characteristics |
JP2005005691A (en) * | 2003-05-16 | 2005-01-06 | Semiconductor Energy Lab Co Ltd | Method for evaluating field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5953702B2 (en) | 1984-12-26 |
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