JPS52100979A - Production and drive of dual gate schottky barrier gate type fieled ef fect transistor - Google Patents

Production and drive of dual gate schottky barrier gate type fieled ef fect transistor

Info

Publication number
JPS52100979A
JPS52100979A JP1777476A JP1777476A JPS52100979A JP S52100979 A JPS52100979 A JP S52100979A JP 1777476 A JP1777476 A JP 1777476A JP 1777476 A JP1777476 A JP 1777476A JP S52100979 A JPS52100979 A JP S52100979A
Authority
JP
Japan
Prior art keywords
schottky barrier
fieled
production
drive
barrier gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1777476A
Other languages
Japanese (ja)
Other versions
JPS5931870B2 (en
Inventor
Masaki Ogawa
Michi Furuzuka
Masaoki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1777476A priority Critical patent/JPS5931870B2/en
Priority to FR7605289A priority patent/FR2302592A1/en
Priority to GB7460/76A priority patent/GB1543363A/en
Priority to US05/661,256 priority patent/US4048646A/en
Priority to DE19762607898 priority patent/DE2607898A1/en
Publication of JPS52100979A publication Critical patent/JPS52100979A/en
Publication of JPS5931870B2 publication Critical patent/JPS5931870B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain low noise characteristics in microwave region by putting independent ohmic contact intermediate metallic piece on semiconductor substrate in the region sandwitched by the first and second schottky barrier gate electrode.
COPYRIGHT: (C)1977,JPO&Japio
JP1777476A 1975-02-26 1976-02-20 Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method Expired JPS5931870B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1777476A JPS5931870B2 (en) 1976-02-20 1976-02-20 Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method
FR7605289A FR2302592A1 (en) 1975-02-26 1976-02-25 DOUBLE DOOR SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR
GB7460/76A GB1543363A (en) 1975-02-26 1976-02-25 Dual-gate schottky barrier gate field effect transistors
US05/661,256 US4048646A (en) 1975-02-26 1976-02-25 Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same
DE19762607898 DE2607898A1 (en) 1975-02-26 1976-02-26 DOUBLE GATE SCHOTTKY FIELD EFFECT TRANSISTOR WITH INTERMEDIATE ELECTRODE AND PROCESS FOR PRODUCING IT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1777476A JPS5931870B2 (en) 1976-02-20 1976-02-20 Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP22174183A Division JPS6024073A (en) 1983-11-25 1983-11-25 Bi-gate-schottky barrier gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS52100979A true JPS52100979A (en) 1977-08-24
JPS5931870B2 JPS5931870B2 (en) 1984-08-04

Family

ID=11953050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1777476A Expired JPS5931870B2 (en) 1975-02-26 1976-02-20 Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method

Country Status (1)

Country Link
JP (1) JPS5931870B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135679A (en) * 1982-02-08 1983-08-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field effect transistor
JPS58122163U (en) * 1982-02-10 1983-08-19 株式会社田村電機製作所 Warning display counter
JPS6024073A (en) * 1983-11-25 1985-02-06 Nec Corp Bi-gate-schottky barrier gate type field-effect transistor
JPS61168967A (en) * 1985-01-22 1986-07-30 Matsushita Electric Ind Co Ltd Semiconductor device
US4804153A (en) * 1985-06-26 1989-02-14 Sumitomo Electric Industries, Ltd. Method and apparatus for withdrawing long-sized objects
JP2005340739A (en) * 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd Switching circuit and semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441276U (en) * 1987-09-08 1989-03-13

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135679A (en) * 1982-02-08 1983-08-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field effect transistor
JPS58122163U (en) * 1982-02-10 1983-08-19 株式会社田村電機製作所 Warning display counter
JPS6024073A (en) * 1983-11-25 1985-02-06 Nec Corp Bi-gate-schottky barrier gate type field-effect transistor
JPS61168967A (en) * 1985-01-22 1986-07-30 Matsushita Electric Ind Co Ltd Semiconductor device
US4804153A (en) * 1985-06-26 1989-02-14 Sumitomo Electric Industries, Ltd. Method and apparatus for withdrawing long-sized objects
JP2005340739A (en) * 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd Switching circuit and semiconductor device
JP4559772B2 (en) * 2004-05-31 2010-10-13 パナソニック株式会社 Switch circuit

Also Published As

Publication number Publication date
JPS5931870B2 (en) 1984-08-04

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