JPS52100979A - Production and drive of dual gate schottky barrier gate type fieled ef fect transistor - Google Patents
Production and drive of dual gate schottky barrier gate type fieled ef fect transistorInfo
- Publication number
- JPS52100979A JPS52100979A JP1777476A JP1777476A JPS52100979A JP S52100979 A JPS52100979 A JP S52100979A JP 1777476 A JP1777476 A JP 1777476A JP 1777476 A JP1777476 A JP 1777476A JP S52100979 A JPS52100979 A JP S52100979A
- Authority
- JP
- Japan
- Prior art keywords
- schottky barrier
- fieled
- production
- drive
- barrier gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To obtain low noise characteristics in microwave region by putting independent ohmic contact intermediate metallic piece on semiconductor substrate in the region sandwitched by the first and second schottky barrier gate electrode.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1777476A JPS5931870B2 (en) | 1976-02-20 | 1976-02-20 | Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method |
FR7605289A FR2302592A1 (en) | 1975-02-26 | 1976-02-25 | DOUBLE DOOR SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR |
GB7460/76A GB1543363A (en) | 1975-02-26 | 1976-02-25 | Dual-gate schottky barrier gate field effect transistors |
US05/661,256 US4048646A (en) | 1975-02-26 | 1976-02-25 | Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same |
DE19762607898 DE2607898A1 (en) | 1975-02-26 | 1976-02-26 | DOUBLE GATE SCHOTTKY FIELD EFFECT TRANSISTOR WITH INTERMEDIATE ELECTRODE AND PROCESS FOR PRODUCING IT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1777476A JPS5931870B2 (en) | 1976-02-20 | 1976-02-20 | Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22174183A Division JPS6024073A (en) | 1983-11-25 | 1983-11-25 | Bi-gate-schottky barrier gate type field-effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52100979A true JPS52100979A (en) | 1977-08-24 |
JPS5931870B2 JPS5931870B2 (en) | 1984-08-04 |
Family
ID=11953050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1777476A Expired JPS5931870B2 (en) | 1975-02-26 | 1976-02-20 | Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931870B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58135679A (en) * | 1982-02-08 | 1983-08-12 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field effect transistor |
JPS58122163U (en) * | 1982-02-10 | 1983-08-19 | 株式会社田村電機製作所 | Warning display counter |
JPS6024073A (en) * | 1983-11-25 | 1985-02-06 | Nec Corp | Bi-gate-schottky barrier gate type field-effect transistor |
JPS61168967A (en) * | 1985-01-22 | 1986-07-30 | Matsushita Electric Ind Co Ltd | Semiconductor device |
US4804153A (en) * | 1985-06-26 | 1989-02-14 | Sumitomo Electric Industries, Ltd. | Method and apparatus for withdrawing long-sized objects |
JP2005340739A (en) * | 2004-05-31 | 2005-12-08 | Matsushita Electric Ind Co Ltd | Switching circuit and semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6441276U (en) * | 1987-09-08 | 1989-03-13 |
-
1976
- 1976-02-20 JP JP1777476A patent/JPS5931870B2/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58135679A (en) * | 1982-02-08 | 1983-08-12 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field effect transistor |
JPS58122163U (en) * | 1982-02-10 | 1983-08-19 | 株式会社田村電機製作所 | Warning display counter |
JPS6024073A (en) * | 1983-11-25 | 1985-02-06 | Nec Corp | Bi-gate-schottky barrier gate type field-effect transistor |
JPS61168967A (en) * | 1985-01-22 | 1986-07-30 | Matsushita Electric Ind Co Ltd | Semiconductor device |
US4804153A (en) * | 1985-06-26 | 1989-02-14 | Sumitomo Electric Industries, Ltd. | Method and apparatus for withdrawing long-sized objects |
JP2005340739A (en) * | 2004-05-31 | 2005-12-08 | Matsushita Electric Ind Co Ltd | Switching circuit and semiconductor device |
JP4559772B2 (en) * | 2004-05-31 | 2010-10-13 | パナソニック株式会社 | Switch circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS5931870B2 (en) | 1984-08-04 |
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