JPS52100979A - Production and drive of dual gate schottky barrier gate type fieled ef fect transistor - Google Patents

Production and drive of dual gate schottky barrier gate type fieled ef fect transistor

Info

Publication number
JPS52100979A
JPS52100979A JP1777476A JP1777476A JPS52100979A JP S52100979 A JPS52100979 A JP S52100979A JP 1777476 A JP1777476 A JP 1777476A JP 1777476 A JP1777476 A JP 1777476A JP S52100979 A JPS52100979 A JP S52100979A
Authority
JP
Japan
Prior art keywords
schottky barrier
fieled
production
drive
barrier gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1777476A
Other languages
Japanese (ja)
Other versions
JPS5931870B2 (en
Inventor
Masaki Ogawa
Michi Furuzuka
Masaoki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1777476A priority Critical patent/JPS5931870B2/en
Priority to US05/661,256 priority patent/US4048646A/en
Priority to FR7605289A priority patent/FR2302592A1/en
Priority to GB7460/76A priority patent/GB1543363A/en
Priority to DE19762607898 priority patent/DE2607898A1/en
Publication of JPS52100979A publication Critical patent/JPS52100979A/en
Publication of JPS5931870B2 publication Critical patent/JPS5931870B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain low noise characteristics in microwave region by putting independent ohmic contact intermediate metallic piece on semiconductor substrate in the region sandwitched by the first and second schottky barrier gate electrode.
COPYRIGHT: (C)1977,JPO&Japio
JP1777476A 1975-02-26 1976-02-20 Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method Expired JPS5931870B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1777476A JPS5931870B2 (en) 1976-02-20 1976-02-20 Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method
US05/661,256 US4048646A (en) 1975-02-26 1976-02-25 Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same
FR7605289A FR2302592A1 (en) 1975-02-26 1976-02-25 DOUBLE DOOR SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR
GB7460/76A GB1543363A (en) 1975-02-26 1976-02-25 Dual-gate schottky barrier gate field effect transistors
DE19762607898 DE2607898A1 (en) 1975-02-26 1976-02-26 DOUBLE GATE SCHOTTKY FIELD EFFECT TRANSISTOR WITH INTERMEDIATE ELECTRODE AND PROCESS FOR PRODUCING IT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1777476A JPS5931870B2 (en) 1976-02-20 1976-02-20 Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58221741A Division JPS6024073A (en) 1983-11-25 1983-11-25 Double-gate short-barrier gate field-effect transistor

Publications (2)

Publication Number Publication Date
JPS52100979A true JPS52100979A (en) 1977-08-24
JPS5931870B2 JPS5931870B2 (en) 1984-08-04

Family

ID=11953050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1777476A Expired JPS5931870B2 (en) 1975-02-26 1976-02-20 Dual-gate short-barrier gate field effect transistor, its manufacturing method, and its driving method

Country Status (1)

Country Link
JP (1) JPS5931870B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135679A (en) * 1982-02-08 1983-08-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field effect transistor
JPS58122163U (en) * 1982-02-10 1983-08-19 株式会社田村電機製作所 Warning display counter
JPS6024073A (en) * 1983-11-25 1985-02-06 Nec Corp Double-gate short-barrier gate field-effect transistor
JPS61168967A (en) * 1985-01-22 1986-07-30 Matsushita Electric Ind Co Ltd semiconductor equipment
US4804153A (en) * 1985-06-26 1989-02-14 Sumitomo Electric Industries, Ltd. Method and apparatus for withdrawing long-sized objects
JP2005340739A (en) * 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd Switch circuit and semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441276U (en) * 1987-09-08 1989-03-13

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135679A (en) * 1982-02-08 1983-08-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field effect transistor
JPS58122163U (en) * 1982-02-10 1983-08-19 株式会社田村電機製作所 Warning display counter
JPS6024073A (en) * 1983-11-25 1985-02-06 Nec Corp Double-gate short-barrier gate field-effect transistor
JPS61168967A (en) * 1985-01-22 1986-07-30 Matsushita Electric Ind Co Ltd semiconductor equipment
US4804153A (en) * 1985-06-26 1989-02-14 Sumitomo Electric Industries, Ltd. Method and apparatus for withdrawing long-sized objects
JP2005340739A (en) * 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd Switch circuit and semiconductor device

Also Published As

Publication number Publication date
JPS5931870B2 (en) 1984-08-04

Similar Documents

Publication Publication Date Title
JPS5279679A (en) Semiconductor memory device
JPS535581A (en) Schottky gate type field effect transistor
JPS52100979A (en) Production and drive of dual gate schottky barrier gate type fieled ef fect transistor
JPS546777A (en) Field effect type transistor
JPS5382179A (en) Field effect transistor
JPS5691477A (en) Semiconductor
JPS5382277A (en) Schottky gate field effect transistor
JPS5376676A (en) High breakdown voltage field effect power transistor
JPS5381087A (en) Gallium aresenide field effect transistor
JPS5245280A (en) Field effect transistor of schottky barrier type
JPS5425678A (en) Field effect transistor of ultra high frequency and high output
JPS52108777A (en) Field-effect transistor for schottky barrier layer
JPS54101285A (en) Dual gate field effect transistor
JPS52128078A (en) Manufacture of field effect transistor
JPS5291382A (en) Insulating gate type field effect transistor
JPS5286086A (en) Field effect transistor
JPS5467779A (en) Schottky barrier gate type field effect transistor
JPS52100877A (en) Field effect transistor of junction type
JPS52147983A (en) Insulation gate type semiconductor device
JPS52100875A (en) Mos transistor
JPS52136583A (en) Mos type semiconductor device
JPS5423375A (en) Manufacture of schottky barrier type electrode
JPS5372578A (en) Mis-type field effect transistor
JPS5348488A (en) Field effect transistor
JPS5310983A (en) Insulated gate type field effect transistor