JPS5394767A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5394767A
JPS5394767A JP865777A JP865777A JPS5394767A JP S5394767 A JPS5394767 A JP S5394767A JP 865777 A JP865777 A JP 865777A JP 865777 A JP865777 A JP 865777A JP S5394767 A JPS5394767 A JP S5394767A
Authority
JP
Japan
Prior art keywords
electrode
manufacture
semiconductor device
sio
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP865777A
Other languages
Japanese (ja)
Inventor
Hisao Nozawa
Yoshio Honma
Yukiyoshi Harada
Takahide Ikeda
Hisayuki Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP865777A priority Critical patent/JPS5394767A/en
Publication of JPS5394767A publication Critical patent/JPS5394767A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve the contact resistance and electric characteristics between the electrode and substrate during the formation of the electrode of a Schottky barrier diode through sputtering etching, by making the SiO2 film used for providing an opening to the electrode part to remain until a halfway process.
COPYRIGHT: (C)1978,JPO&Japio
JP865777A 1977-01-31 1977-01-31 Manufacture of semiconductor device Pending JPS5394767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP865777A JPS5394767A (en) 1977-01-31 1977-01-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP865777A JPS5394767A (en) 1977-01-31 1977-01-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5394767A true JPS5394767A (en) 1978-08-19

Family

ID=11698995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP865777A Pending JPS5394767A (en) 1977-01-31 1977-01-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5394767A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623783A (en) * 1979-08-01 1981-03-06 Matsushita Electronics Corp Formation of electrode for semiconductor device
JPS56105631A (en) * 1980-01-25 1981-08-22 Mitsubishi Electric Corp Electrode formation of semiconductor device
US6051485A (en) * 1997-04-24 2000-04-18 Siemens Aktiengesellschaft Method of producing a platinum-metal pattern or structure by a lift-off process
JP2003504855A (en) * 1999-07-03 2003-02-04 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Diode with metal semiconductor contact and method of manufacturing diode with metal semiconductor contact

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021679A (en) * 1973-06-25 1975-03-07
JPS5061190A (en) * 1973-09-28 1975-05-26

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021679A (en) * 1973-06-25 1975-03-07
JPS5061190A (en) * 1973-09-28 1975-05-26

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623783A (en) * 1979-08-01 1981-03-06 Matsushita Electronics Corp Formation of electrode for semiconductor device
JPS6222463B2 (en) * 1979-08-01 1987-05-18 Matsushita Electronics Corp
JPS56105631A (en) * 1980-01-25 1981-08-22 Mitsubishi Electric Corp Electrode formation of semiconductor device
US6051485A (en) * 1997-04-24 2000-04-18 Siemens Aktiengesellschaft Method of producing a platinum-metal pattern or structure by a lift-off process
JP2003504855A (en) * 1999-07-03 2003-02-04 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Diode with metal semiconductor contact and method of manufacturing diode with metal semiconductor contact

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