JPS5385158A - Electrode forming method of semiconductor device - Google Patents

Electrode forming method of semiconductor device

Info

Publication number
JPS5385158A
JPS5385158A JP65077A JP65077A JPS5385158A JP S5385158 A JPS5385158 A JP S5385158A JP 65077 A JP65077 A JP 65077A JP 65077 A JP65077 A JP 65077A JP S5385158 A JPS5385158 A JP S5385158A
Authority
JP
Japan
Prior art keywords
semiconductor device
forming method
electrode forming
electrode layer
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP65077A
Other languages
Japanese (ja)
Inventor
Takayuki Matsukawa
Satoru Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP65077A priority Critical patent/JPS5385158A/en
Publication of JPS5385158A publication Critical patent/JPS5385158A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent disconnection by the recrystallization of the internal wiring formed simultaneously with an electrode layer by forming an ion-implanted layer on the surface of a semiconductor substrate making non-rectifying contact to the electrode layer through the use of an ion implantation method.
COPYRIGHT: (C)1978,JPO&Japio
JP65077A 1977-01-06 1977-01-06 Electrode forming method of semiconductor device Pending JPS5385158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP65077A JPS5385158A (en) 1977-01-06 1977-01-06 Electrode forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP65077A JPS5385158A (en) 1977-01-06 1977-01-06 Electrode forming method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5385158A true JPS5385158A (en) 1978-07-27

Family

ID=11479578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP65077A Pending JPS5385158A (en) 1977-01-06 1977-01-06 Electrode forming method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5385158A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156811A (en) * 1984-12-28 1986-07-16 Toshiba Corp Manufacture of semiconductor device
JPS6255930A (en) * 1985-09-05 1987-03-11 Mitsubishi Electric Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666567A (en) * 1970-01-15 1972-05-30 Hughes Aircraft Co Method of forming an ohmic contact region in a thin semiconductor layer
JPS4836981A (en) * 1971-09-13 1973-05-31

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666567A (en) * 1970-01-15 1972-05-30 Hughes Aircraft Co Method of forming an ohmic contact region in a thin semiconductor layer
JPS4836981A (en) * 1971-09-13 1973-05-31

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156811A (en) * 1984-12-28 1986-07-16 Toshiba Corp Manufacture of semiconductor device
JPH0455325B2 (en) * 1984-12-28 1992-09-03 Tokyo Shibaura Electric Co
JPS6255930A (en) * 1985-09-05 1987-03-11 Mitsubishi Electric Corp Manufacture of semiconductor device

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