JPS5513947A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5513947A
JPS5513947A JP8697678A JP8697678A JPS5513947A JP S5513947 A JPS5513947 A JP S5513947A JP 8697678 A JP8697678 A JP 8697678A JP 8697678 A JP8697678 A JP 8697678A JP S5513947 A JPS5513947 A JP S5513947A
Authority
JP
Japan
Prior art keywords
region
layer
type
sio
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8697678A
Other languages
Japanese (ja)
Inventor
Toshio Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP8697678A priority Critical patent/JPS5513947A/en
Publication of JPS5513947A publication Critical patent/JPS5513947A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To remarkably reduce the wiring area by making a common use of a source electrode of MOS type transistor which is not exposed to the surface and is kept conductive in the interior of a substrate body.
CONSTITUTION: A P-type layer 12 used as a common region at a predetermined depth is formed on the surface of a N-type Si substrate 10, and a SiO2 film having an opening in the region wherein a MOS-type transistor has been made is covered over the layer 12. Successively, O2 ion is implated into a thick mask 13 over the opening to turn the SiO2 film into a SiO2 film 11 having a higher insulating property. Thereafter, the mask 13 is removed, a N-type layer 14 is epi-grown on the full surface and is covered with a SiO2 film 19, and an opening is provided to diffuse and form a P-type surce region 15 reaching to the substarte 10 exposed to the opening previously provided within the layer 14 and a P-type drain region 16 reaching only to the layer 2. Successively, A electrode 18 and 17 are attached to the region 16 and layer 14 to utilize the region 15 for the conduction portion to the other transistor's source region.
COPYRIGHT: (C)1980,JPO&Japio
JP8697678A 1978-07-17 1978-07-17 Semiconductor integrated circuit device Pending JPS5513947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8697678A JPS5513947A (en) 1978-07-17 1978-07-17 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8697678A JPS5513947A (en) 1978-07-17 1978-07-17 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5513947A true JPS5513947A (en) 1980-01-31

Family

ID=13901894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8697678A Pending JPS5513947A (en) 1978-07-17 1978-07-17 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5513947A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710267A (en) * 1980-06-23 1982-01-19 Fujitsu Ltd Semiconductor device
JPS6310557U (en) * 1986-07-08 1988-01-23

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939233A (en) * 1972-08-21 1974-04-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939233A (en) * 1972-08-21 1974-04-12

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710267A (en) * 1980-06-23 1982-01-19 Fujitsu Ltd Semiconductor device
JPH0467336B2 (en) * 1980-06-23 1992-10-28 Fujitsu Ltd
JPS6310557U (en) * 1986-07-08 1988-01-23

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