JPS6310557U - - Google Patents
Info
- Publication number
- JPS6310557U JPS6310557U JP10462486U JP10462486U JPS6310557U JP S6310557 U JPS6310557 U JP S6310557U JP 10462486 U JP10462486 U JP 10462486U JP 10462486 U JP10462486 U JP 10462486U JP S6310557 U JPS6310557 U JP S6310557U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- conductive layer
- silicon layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 239000012212 insulator Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図は本考案の一実施例を示す半導体装置の
断面図である。第２図は従来のＬＳＩチツプ表面
のＧＮＤラインの形状例を示す斜視図である。
３……シリコン基板、４……接地導電層、５…
…絶縁層、６……ＳＯＩ技術によるシリコン層、
７……貫通導電層、８……ＳｉＯ２層、９……半
導体素子、１１……接地電極。
FIG. 1 is a sectional view of a semiconductor device showing an embodiment of the present invention. FIG. 2 is a perspective view showing an example of the shape of a GND line on the surface of a conventional LSI chip. 3...Silicon substrate, 4...Ground conductive layer, 5...
...Insulating layer, 6...Silicon layer by SOI technology,
7... Penetrating conductive layer, 8... SiO 2 layer, 9... Semiconductor element, 11... Ground electrode.
Claims (1)
層、絶縁層、ＳＯＩ〔シリコン・オン・インシユ
レータ〕技術により形成されたシリコン層と、 上記シリコン層に形成されたアクテイブ領域及
びフイールド領域と、 上記接地導電層から上記絶縁層及びシリコン層
を貫通してシリコン層上の接地電極にまで延びる
貫通導電層とを有することを特徴とする半導体装
置。[Claims for Utility Model Registration] A grounded conductive layer, an insulating layer, a silicon layer formed by SOI (silicon on insulator) technology, and an active layer formed on the silicon layer, which are laminated in this order on a silicon substrate. What is claimed is: 1. A semiconductor device comprising: a region and a field region; and a through conductive layer extending from the ground conductive layer through the insulating layer and the silicon layer to a ground electrode on the silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10462486U JPS6310557U (en) | 1986-07-08 | 1986-07-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10462486U JPS6310557U (en) | 1986-07-08 | 1986-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6310557U true JPS6310557U (en) | 1988-01-23 |
Family
ID=30978290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10462486U Pending JPS6310557U (en) | 1986-07-08 | 1986-07-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6310557U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513947A (en) * | 1978-07-17 | 1980-01-31 | Seiko Epson Corp | Semiconductor integrated circuit device |
| JPS59115555A (en) * | 1982-12-22 | 1984-07-04 | Toshiba Corp | Semiconductor integrated circuit |
| JPS60210860A (en) * | 1984-04-04 | 1985-10-23 | Sharp Corp | Semiconductor ic element |
-
1986
- 1986-07-08 JP JP10462486U patent/JPS6310557U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513947A (en) * | 1978-07-17 | 1980-01-31 | Seiko Epson Corp | Semiconductor integrated circuit device |
| JPS59115555A (en) * | 1982-12-22 | 1984-07-04 | Toshiba Corp | Semiconductor integrated circuit |
| JPS60210860A (en) * | 1984-04-04 | 1985-10-23 | Sharp Corp | Semiconductor ic element |