JPS57198689A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57198689A
JPS57198689A JP8521981A JP8521981A JPS57198689A JP S57198689 A JPS57198689 A JP S57198689A JP 8521981 A JP8521981 A JP 8521981A JP 8521981 A JP8521981 A JP 8521981A JP S57198689 A JPS57198689 A JP S57198689A
Authority
JP
Japan
Prior art keywords
type
fet
oxide film
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8521981A
Other languages
Japanese (ja)
Inventor
Nobuyasu Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8521981A priority Critical patent/JPS57198689A/en
Publication of JPS57198689A publication Critical patent/JPS57198689A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters

Abstract

PURPOSE:To simplify interconnecting wiring, by forming a step in an semiinsulating GaAs substrate by etching, providing a laser diode part at the concave part of the step, providing a diode driving FET part at the convex part, ensuring the electric isolation of these parts, and making the surface approximately flat. CONSTITUTION:On the semi-inuslating substrate 1', an oxide film 13' is deposited. The step part is formed at the part of the substrate by a photolithography process. With the remaining film 13' as a mask, an N type GaAlAs clad layer 2, a GaAlAs active layer 3, a P type GaAlAs clad layer 4, and a P type GaAs low resistance layer 5 are layered and epitaxially grown in the concave part of the step. Then the film 13' is removed. The surface of the concave part is coated by an oxide film 13'', which is extended on the end part of the covex part. An N type or P type GaAs layer 7 forming an FET is grown on the exposed convex part. An oxide film 13 is deposited on the entire surface. A window is opened in the convex part, and a P type region 14 which is to become a diode electrode part is formed. Thereafter, the laser diode and the FET are formed in accordance with normal processes.
JP8521981A 1981-05-30 1981-05-30 Semiconductor device Pending JPS57198689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8521981A JPS57198689A (en) 1981-05-30 1981-05-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8521981A JPS57198689A (en) 1981-05-30 1981-05-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57198689A true JPS57198689A (en) 1982-12-06

Family

ID=13852454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8521981A Pending JPS57198689A (en) 1981-05-30 1981-05-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57198689A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609185A (en) * 1983-06-29 1985-01-18 Agency Of Ind Science & Technol Semiconductor laser integrated circuit device
US6222866B1 (en) * 1997-01-06 2001-04-24 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser, its producing method and surface emitting semiconductor laser array

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132387A (en) * 1981-02-09 1982-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132387A (en) * 1981-02-09 1982-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609185A (en) * 1983-06-29 1985-01-18 Agency Of Ind Science & Technol Semiconductor laser integrated circuit device
US6222866B1 (en) * 1997-01-06 2001-04-24 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser, its producing method and surface emitting semiconductor laser array

Similar Documents

Publication Publication Date Title
JPS5519857A (en) Semiconductor
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS57176772A (en) Semiconductor device and manufacture thereof
JPS56104488A (en) Semiconductor laser element
GB1530085A (en) Semiconductor device manufacture
JPS57198689A (en) Semiconductor device
JPS55105361A (en) Semiconductor device
JPS6441240A (en) Semiconductor integrated circuit device
JPS572519A (en) Manufacture of semiconductor device
JPS5661169A (en) Preparation of compound semiconductor device
JPS57188884A (en) Formation of recessed minute multilayer gate electrode
JPS54123887A (en) Photo integrated citcuit
JPS55151370A (en) Field effect transistor and fabricating method of the same
JPS57118681A (en) Manufacture of semiconductor light emitting diode
JPS5642390A (en) Formation of electrode on semiconductor device
JPS57145370A (en) Semiconductor device
JPS57153430A (en) Manufacture of semiconductor device
JPS6455890A (en) Semiconductor substrate
NOBUYASU Semiconductor device
JPS6467971A (en) Thin film transistor
JPS57118683A (en) Manufacture of callium arsenide hall device
JPS54162484A (en) Manufacture of semiconductor device
JPS5763883A (en) Manufacture of semiconductor laser element
JPS5519882A (en) Method of manufacturing field effect transistor
JPS57211784A (en) Field effect transistor