JPS57118681A - Manufacture of semiconductor light emitting diode - Google Patents

Manufacture of semiconductor light emitting diode

Info

Publication number
JPS57118681A
JPS57118681A JP439281A JP439281A JPS57118681A JP S57118681 A JPS57118681 A JP S57118681A JP 439281 A JP439281 A JP 439281A JP 439281 A JP439281 A JP 439281A JP S57118681 A JPS57118681 A JP S57118681A
Authority
JP
Japan
Prior art keywords
electrode
light emitting
layer
emitting surface
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP439281A
Other languages
Japanese (ja)
Inventor
Osamu Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP439281A priority Critical patent/JPS57118681A/en
Publication of JPS57118681A publication Critical patent/JPS57118681A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To reduce curvature radius and enhance electrode adherence by a method wherein the electrode provided around the light emitting surface on a semiconductor light emitting device is coated with an insulating layer serving as a mask in an light emitting surface etching process and then the electrode is made into an alloy in a heat treatment. CONSTITUTION:An N type window layer 102, an active layer 103 and a P type limiting layer 104 are formed and a P type electrode 105 (106 for insulating) and an Au layer 107 are provided on a GaAs substrate, and then the substrate is removed. Then an N type electrode 108 is built surrounding the N type window layer 102 and the electrode 108 is coated with an SiO2 layer 109. The SiO2 layer 109 serves as a mask when a curvature is formed by etching on the light emitting surface. Next, the electrode is transformed into an alloy in a heat treatment and, lastly, a non-reflective SiO2 coat 110 is formed covering the light emitting surface. This setup provides a reduced radius of curvature for the light emitting surface and an increased adherence feature for the electrode.
JP439281A 1981-01-14 1981-01-14 Manufacture of semiconductor light emitting diode Pending JPS57118681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP439281A JPS57118681A (en) 1981-01-14 1981-01-14 Manufacture of semiconductor light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP439281A JPS57118681A (en) 1981-01-14 1981-01-14 Manufacture of semiconductor light emitting diode

Publications (1)

Publication Number Publication Date
JPS57118681A true JPS57118681A (en) 1982-07-23

Family

ID=11583076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP439281A Pending JPS57118681A (en) 1981-01-14 1981-01-14 Manufacture of semiconductor light emitting diode

Country Status (1)

Country Link
JP (1) JPS57118681A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01156573U (en) * 1988-04-14 1989-10-27
JPH0691283B2 (en) * 1984-11-21 1994-11-14 アメリカン テレフオン アンド テレグラフ カムパニ− Asymmetrical structure of LED chip
JPH11298046A (en) * 1998-03-18 1999-10-29 Trw Inc Manufacture of semiconductor optical microlens

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691283B2 (en) * 1984-11-21 1994-11-14 アメリカン テレフオン アンド テレグラフ カムパニ− Asymmetrical structure of LED chip
JPH01156573U (en) * 1988-04-14 1989-10-27
JPH11298046A (en) * 1998-03-18 1999-10-29 Trw Inc Manufacture of semiconductor optical microlens

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