JPS56155583A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS56155583A
JPS56155583A JP5763680A JP5763680A JPS56155583A JP S56155583 A JPS56155583 A JP S56155583A JP 5763680 A JP5763680 A JP 5763680A JP 5763680 A JP5763680 A JP 5763680A JP S56155583 A JPS56155583 A JP S56155583A
Authority
JP
Japan
Prior art keywords
type inp
layer
substrate
mesa line
epitaxially formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5763680A
Other languages
Japanese (ja)
Inventor
Satoshi Furumiya
Jiro Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5763680A priority Critical patent/JPS56155583A/en
Publication of JPS56155583A publication Critical patent/JPS56155583A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser of excellent heat-radiating efficiency by a method wherein a clad layer, an active layer and a clad layer are piled up one upon another on a semiconductor substrate and etched to form a mesa line, and a clad layer is epitaxially formed around the mesa line in order to bury the same. CONSTITUTION:On an N type InP substrate 1, an N type InP 2, an N type InGaAsP active layer 3 and a P type InP 4 are epitaxially formed. An SiO2 mask 7 is provided thereon to perform an anisotropic etching to form a mesa line 6'. Then, a P type InP 8 and an N type InP 9 are continuously epitaxially formed to bury the mesa line 6'. After the mask 7 has been removed, a P type InGaAs connecting layer 14 is epitaxially formed. Consequently, the slightly concave portion 12 remote from the mesa line is absorbed into the layer 14, so that a flat surface is formed. Then, said surface is coated with an Au-Zn alloy to form an electrode 11, while the back surface of the substrate 1 is coated with an Au-Sn alloy to form an electrode 13. The substrate is formed into a chip and secured to a heat sink through an In solder in an upside down manner to obtain a laser which has fewer possibilities of breakage and is excellent in the heat radiating efficiency.
JP5763680A 1980-04-30 1980-04-30 Manufacture of semiconductor laser Pending JPS56155583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5763680A JPS56155583A (en) 1980-04-30 1980-04-30 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5763680A JPS56155583A (en) 1980-04-30 1980-04-30 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56155583A true JPS56155583A (en) 1981-12-01

Family

ID=13061369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5763680A Pending JPS56155583A (en) 1980-04-30 1980-04-30 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56155583A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0212977A2 (en) * 1985-08-21 1987-03-04 Sharp Kabushiki Kaisha A buried type semiconductor laser device
US4730329A (en) * 1985-06-10 1988-03-08 Sharp Kabushiki Kaisha Semiconductor laser device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113588A (en) * 1974-07-24 1976-02-03 Hitachi Ltd
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113588A (en) * 1974-07-24 1976-02-03 Hitachi Ltd
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4730329A (en) * 1985-06-10 1988-03-08 Sharp Kabushiki Kaisha Semiconductor laser device
EP0212977A2 (en) * 1985-08-21 1987-03-04 Sharp Kabushiki Kaisha A buried type semiconductor laser device

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