JPS5796586A - Manufacture of mesa striped semiconductor laser - Google Patents

Manufacture of mesa striped semiconductor laser

Info

Publication number
JPS5796586A
JPS5796586A JP17371180A JP17371180A JPS5796586A JP S5796586 A JPS5796586 A JP S5796586A JP 17371180 A JP17371180 A JP 17371180A JP 17371180 A JP17371180 A JP 17371180A JP S5796586 A JPS5796586 A JP S5796586A
Authority
JP
Japan
Prior art keywords
section
bonding
striped
electrode
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17371180A
Other languages
Japanese (ja)
Other versions
JPS6119120B2 (en
Inventor
Takao Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP17371180A priority Critical patent/JPS5796586A/en
Publication of JPS5796586A publication Critical patent/JPS5796586A/en
Publication of JPS6119120B2 publication Critical patent/JPS6119120B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To control a crystal defect due to a shock at the time of bonding by depositing an insulating layer with a striped groove onto a semiconductor element substrate and forming an electrode to be shaped by a striped section, a bonding section and a crosslinking section. CONSTITUTION:The insulating layer 17 with the striped groove 18 is deposited on the semiconductor element substrate 16, and an electrode 19 consisting of the bonding section 21 and the crosslinking section 22 is formed in the striped section 20. The insulating layer of a section where the electrode is not shaped is removed, and the substrate is etched. Accordingly, the generation of the crystal defect in a light emitting layer 23 due to the shock at the time of the bonding of a gold wire 26 is controlled while the generation of leakage currents in the light emitting layer can be restrained.
JP17371180A 1980-12-08 1980-12-08 Manufacture of mesa striped semiconductor laser Granted JPS5796586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17371180A JPS5796586A (en) 1980-12-08 1980-12-08 Manufacture of mesa striped semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17371180A JPS5796586A (en) 1980-12-08 1980-12-08 Manufacture of mesa striped semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5796586A true JPS5796586A (en) 1982-06-15
JPS6119120B2 JPS6119120B2 (en) 1986-05-15

Family

ID=15965709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17371180A Granted JPS5796586A (en) 1980-12-08 1980-12-08 Manufacture of mesa striped semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5796586A (en)

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPL PHYS LEFT=1972 *
APPL PHYS LETT=1979 *
J ELECTROCHEM SOC=1976 *

Also Published As

Publication number Publication date
JPS6119120B2 (en) 1986-05-15

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