JPS5730384A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS5730384A
JPS5730384A JP10415980A JP10415980A JPS5730384A JP S5730384 A JPS5730384 A JP S5730384A JP 10415980 A JP10415980 A JP 10415980A JP 10415980 A JP10415980 A JP 10415980A JP S5730384 A JPS5730384 A JP S5730384A
Authority
JP
Japan
Prior art keywords
light emitting
layer
forming
bias electrode
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10415980A
Other languages
Japanese (ja)
Inventor
Tatsuyuki Sanada
Osamu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10415980A priority Critical patent/JPS5730384A/en
Publication of JPS5730384A publication Critical patent/JPS5730384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dot-Matrix Printers And Others (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve the integration of a light emitting element by forming a light emitting part forming a light emitting p-n junction on a semiconductor substrate having a bias electrode on the lower surface, forming an FET layer via an insulating layer having a hole and forming control electrode and bias electrode. CONSTITUTION:Light emitting parts 12-14 forming a light emitting p-n junction are formed on a semiconductor substrate 11 having a bias electrode 18 on the lower surface, an FET layer 17 is formed via an insulating layer 15 having a hole 16, and then a control electrode 20 and a bias electrode 19 are formed. The substrate 11 has one conductive type impurity, and a light emitting part is formed with the single crystal layer of the semiconductor containing impurity having the same conductive type as above as the lowermost layer. An FET layer is formed of the single crystal semiconductor containing impurity of the same conductive type as the uppermost layer semiconductor of the light emitting part. Thus, the light signal is controlled directly, the integration is improved, and the reliability is enhanced.
JP10415980A 1980-07-29 1980-07-29 Semiconductor light emitting element Pending JPS5730384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10415980A JPS5730384A (en) 1980-07-29 1980-07-29 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10415980A JPS5730384A (en) 1980-07-29 1980-07-29 Semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS5730384A true JPS5730384A (en) 1982-02-18

Family

ID=14373275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10415980A Pending JPS5730384A (en) 1980-07-29 1980-07-29 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS5730384A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121885A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Semiconductor light emitting element and manufacture thereof
EP0116304A2 (en) * 1983-01-14 1984-08-22 Kabushiki Kaisha Toshiba Composite optical semiconductor device
JPS59196607U (en) * 1983-06-15 1984-12-27 ニチアス株式会社 sound insulation panel
JPS63101607U (en) * 1986-12-23 1988-07-01

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4871890A (en) * 1971-12-27 1973-09-28
JPS52147087A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor light emitting display device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4871890A (en) * 1971-12-27 1973-09-28
JPS52147087A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor light emitting display device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121885A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Semiconductor light emitting element and manufacture thereof
EP0116304A2 (en) * 1983-01-14 1984-08-22 Kabushiki Kaisha Toshiba Composite optical semiconductor device
JPS59196607U (en) * 1983-06-15 1984-12-27 ニチアス株式会社 sound insulation panel
JPS63101607U (en) * 1986-12-23 1988-07-01

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