JPS57106084A - Amorphous silicon diode - Google Patents

Amorphous silicon diode

Info

Publication number
JPS57106084A
JPS57106084A JP55182353A JP18235380A JPS57106084A JP S57106084 A JPS57106084 A JP S57106084A JP 55182353 A JP55182353 A JP 55182353A JP 18235380 A JP18235380 A JP 18235380A JP S57106084 A JPS57106084 A JP S57106084A
Authority
JP
Japan
Prior art keywords
layer
amorphous
amorphous silicon
upper electrode
silicon diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55182353A
Other languages
Japanese (ja)
Inventor
Mitsuhiko Tashiro
Nobuki Ibaraki
Yoshiko Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55182353A priority Critical patent/JPS57106084A/en
Publication of JPS57106084A publication Critical patent/JPS57106084A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Abstract

PURPOSE:To prevent the occurrence of leak short-circuit between a lower and an upper electrode, by a method wherein an insulating layer is formed between an amorphous Si layer and the upper electrode so as to cover a staged part produced at the end of the amorphous Si layer. CONSTITUTION:A lower electrode 2, a first conductive amorphous Si layer 3, a second conductive amorphous Si layer 4, and an upper electrode 5 are formed on a substrate 1. An insulating layer 6 is formed at a staged part produced at the end of the amorphous Si layer 4, and this permits the prevention of the occurrence of leak short-circuit between the lower electrode 2 and the upper electrode 5.
JP55182353A 1980-12-23 1980-12-23 Amorphous silicon diode Pending JPS57106084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55182353A JPS57106084A (en) 1980-12-23 1980-12-23 Amorphous silicon diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55182353A JPS57106084A (en) 1980-12-23 1980-12-23 Amorphous silicon diode

Publications (1)

Publication Number Publication Date
JPS57106084A true JPS57106084A (en) 1982-07-01

Family

ID=16116821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55182353A Pending JPS57106084A (en) 1980-12-23 1980-12-23 Amorphous silicon diode

Country Status (1)

Country Link
JP (1) JPS57106084A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935491A (en) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd Photo semiconductor device
JPS609176A (en) * 1983-06-29 1985-01-18 Citizen Watch Co Ltd Thin-film diode and manufacture thereof
JPS6024076A (en) * 1983-07-20 1985-02-06 Citizen Watch Co Ltd Thin-film diode and manufacture thereof
US4736229A (en) * 1983-05-11 1988-04-05 Alphasil Incorporated Method of manufacturing flat panel backplanes, display transistors and displays made thereby
JPH04297865A (en) * 1990-10-04 1992-10-21 Mitsubishi Heavy Ind Ltd Reverberation free water tank
US5714795A (en) * 1994-11-11 1998-02-03 Tadahiro Ohmi Semiconductor device utilizing silicide reaction

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935491A (en) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd Photo semiconductor device
US4736229A (en) * 1983-05-11 1988-04-05 Alphasil Incorporated Method of manufacturing flat panel backplanes, display transistors and displays made thereby
JPS609176A (en) * 1983-06-29 1985-01-18 Citizen Watch Co Ltd Thin-film diode and manufacture thereof
JPS6024076A (en) * 1983-07-20 1985-02-06 Citizen Watch Co Ltd Thin-film diode and manufacture thereof
JPH04297865A (en) * 1990-10-04 1992-10-21 Mitsubishi Heavy Ind Ltd Reverberation free water tank
US5714795A (en) * 1994-11-11 1998-02-03 Tadahiro Ohmi Semiconductor device utilizing silicide reaction

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