JPS5739576A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS5739576A
JPS5739576A JP11543280A JP11543280A JPS5739576A JP S5739576 A JPS5739576 A JP S5739576A JP 11543280 A JP11543280 A JP 11543280A JP 11543280 A JP11543280 A JP 11543280A JP S5739576 A JPS5739576 A JP S5739576A
Authority
JP
Japan
Prior art keywords
electrode
cathode
region
insular
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11543280A
Other languages
Japanese (ja)
Inventor
Hiroyasu Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11543280A priority Critical patent/JPS5739576A/en
Publication of JPS5739576A publication Critical patent/JPS5739576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To eliminate the contact of the main region of a gate electrode with a cathode electrode plate by forming an isolating region covered with an insulating film in the same height as a cathode insular electrode between the main region of the gate electrode and the cathode insular electrode. CONSTITUTION:An anode electrode 12, a gate electrode 13, a cathode insular electrode 14 are formed on a silicon substrate 11, and a cathode electrode plate 15 is so formed as to be connected to the entire region of the cathode insular electrode 14. Further, an isolating region 16 of p type or n type for preventing the contact of the main region 13' for picking up externally the gate electrode formed on the periphery of the element with the cathode electrode plate 15 is provided. The main surface of the region 16 is covered with an insulating film 17 of SiO2 of the like.
JP11543280A 1980-08-21 1980-08-21 Gate turn-off thyristor Pending JPS5739576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11543280A JPS5739576A (en) 1980-08-21 1980-08-21 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11543280A JPS5739576A (en) 1980-08-21 1980-08-21 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5739576A true JPS5739576A (en) 1982-03-04

Family

ID=14662417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11543280A Pending JPS5739576A (en) 1980-08-21 1980-08-21 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5739576A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312270A (en) * 1976-07-21 1978-02-03 Internatl Rectifier Corp Japan Ltd Pressrue-contact type semiconductor control unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312270A (en) * 1976-07-21 1978-02-03 Internatl Rectifier Corp Japan Ltd Pressrue-contact type semiconductor control unit

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