JPS5559761A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5559761A JPS5559761A JP13153078A JP13153078A JPS5559761A JP S5559761 A JPS5559761 A JP S5559761A JP 13153078 A JP13153078 A JP 13153078A JP 13153078 A JP13153078 A JP 13153078A JP S5559761 A JPS5559761 A JP S5559761A
- Authority
- JP
- Japan
- Prior art keywords
- grooves
- junction
- annular
- layer
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 abstract 5
- 239000012212 insulator Substances 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To increase the dielectric strength of a semiconductor device by adhering annular insulator onto the surface of a semiconductor substrate disposed between a plurality of annular grooves exposed at the end of its junction to thereby lengthen the active region distance at the groove portion sintered with glass. CONSTITUTION:An insulator is filled in a plurality of annular grooves exposed at the end of its junction among more than three different conductivity type semiconductor regions of a semiconductor substrate, and an annular insulator is adhered onto the surface of the substrate disposed between the grooves. An outside annular groove 261 exposed at its end 27 of a junction J1 and an inside annular groove 262 exposed at its end 28 of a junction J2 are, for example, formed coaxially at a thyristor semiconductor substrate 21 consisting of a PE layer 22, nB layer 23, PB layer 24 and nE layer 25. Glasses 291, 292 are filled and sintered with the respective grooves 261 and 262, and alumina ring 34 is adhered by an adhesive 35 to the surface 231 of the semiconductor substrate disposed between the grooves 261 and 262.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13153078A JPS5559761A (en) | 1978-10-27 | 1978-10-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13153078A JPS5559761A (en) | 1978-10-27 | 1978-10-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5559761A true JPS5559761A (en) | 1980-05-06 |
Family
ID=15060216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13153078A Pending JPS5559761A (en) | 1978-10-27 | 1978-10-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5559761A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111370A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Semiconductor device |
| JPH01293661A (en) * | 1988-05-23 | 1989-11-27 | Nec Corp | Semiconductor device |
-
1978
- 1978-10-27 JP JP13153078A patent/JPS5559761A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111370A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Semiconductor device |
| JPH01293661A (en) * | 1988-05-23 | 1989-11-27 | Nec Corp | Semiconductor device |
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