JPS54136277A - Charge transfer element - Google Patents

Charge transfer element

Info

Publication number
JPS54136277A
JPS54136277A JP4386878A JP4386878A JPS54136277A JP S54136277 A JPS54136277 A JP S54136277A JP 4386878 A JP4386878 A JP 4386878A JP 4386878 A JP4386878 A JP 4386878A JP S54136277 A JPS54136277 A JP S54136277A
Authority
JP
Japan
Prior art keywords
diode
layer
electrode
entire surface
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4386878A
Other languages
Japanese (ja)
Other versions
JPS633468B2 (en
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Makoto Nagao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP4386878A priority Critical patent/JPS54136277A/en
Publication of JPS54136277A publication Critical patent/JPS54136277A/en
Priority to US06/880,097 priority patent/US4799244A/en
Publication of JPS633468B2 publication Critical patent/JPS633468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/005—Arrangements for selecting an address in a digital store with travelling wave access

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain broad dynamic range, by providing the channel stop which keeps the change carrier in the charge transfer channel and the carrier storage section close to the channel or in it. CONSTITUTION:The injection diode 19 and the detection diode 22 are formed in the semiconductor substrate 10 isolatedly each other, and the entire surface is covered with the insulation layer 11. Further, on the layer 11, corresponding to the diode 19 on the layer 11, the injection gate 20 is provided inside and the channel stop 23 is provided outside, forming the detection gate 21 inside the diode 22 and the channel stop 23 outside the diode 22. After that, at the edge of the diode 19, the pad 16 is provided, the piezoelectric layer 12 is coated on the entire surface of element, a series of electrode 24 is formed at the center, and the entire surface is covered with the insulation layer 13. Futher, the comb type electrode 15 and the conductor layer 14 are coated corresponding to the pad 16 and the electrode 24 on it, high frequency voltage is fed to the electrode 15 to cause the waves 18 of potential toward the arrow 17 to store the charge 25 on the storage section 30 of it.
JP4386878A 1978-04-13 1978-04-14 Charge transfer element Granted JPS54136277A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4386878A JPS54136277A (en) 1978-04-14 1978-04-14 Charge transfer element
US06/880,097 US4799244A (en) 1978-04-13 1986-06-30 Surface acoustical wave charge transfer device having a plurality of stationary charge carrier storage portions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4386878A JPS54136277A (en) 1978-04-14 1978-04-14 Charge transfer element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60238298A Division JPS61159765A (en) 1985-10-24 1985-10-24 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS54136277A true JPS54136277A (en) 1979-10-23
JPS633468B2 JPS633468B2 (en) 1988-01-23

Family

ID=12675668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4386878A Granted JPS54136277A (en) 1978-04-13 1978-04-14 Charge transfer element

Country Status (1)

Country Link
JP (1) JPS54136277A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159765A (en) * 1985-10-24 1986-07-19 Fuji Photo Film Co Ltd Charge transfer device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159765A (en) * 1985-10-24 1986-07-19 Fuji Photo Film Co Ltd Charge transfer device
JPH0257704B2 (en) * 1985-10-24 1990-12-05 Fuji Photo Film Co Ltd

Also Published As

Publication number Publication date
JPS633468B2 (en) 1988-01-23

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