FR2395606A1 - High capacity thin film capacitor structure - comprising two electrodes and an insulating layer, with a layer of charge-trapping materials - Google Patents

High capacity thin film capacitor structure - comprising two electrodes and an insulating layer, with a layer of charge-trapping materials

Info

Publication number
FR2395606A1
FR2395606A1 FR7804188A FR7804188A FR2395606A1 FR 2395606 A1 FR2395606 A1 FR 2395606A1 FR 7804188 A FR7804188 A FR 7804188A FR 7804188 A FR7804188 A FR 7804188A FR 2395606 A1 FR2395606 A1 FR 2395606A1
Authority
FR
France
Prior art keywords
layer
charge
electrodes
thin film
high capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7804188A
Other languages
French (fr)
Other versions
FR2395606B1 (en
Inventor
Donelli J Dimaria
Donald R Youg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR7804188A priority Critical patent/FR2395606A1/en
Publication of FR2395606A1 publication Critical patent/FR2395606A1/en
Application granted granted Critical
Publication of FR2395606B1 publication Critical patent/FR2395606B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

One electrode is a substrate and the insulating region is an oxide on the substrate. The interface between the substrate and the insulator presenting irregularities tends to produce locally high electric fields, which are counteracted by the charge-trapping region, situated close to the interface. Improved breakdown voltages are thus obtained.
FR7804188A 1978-02-08 1978-02-08 High capacity thin film capacitor structure - comprising two electrodes and an insulating layer, with a layer of charge-trapping materials Granted FR2395606A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7804188A FR2395606A1 (en) 1978-02-08 1978-02-08 High capacity thin film capacitor structure - comprising two electrodes and an insulating layer, with a layer of charge-trapping materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7804188A FR2395606A1 (en) 1978-02-08 1978-02-08 High capacity thin film capacitor structure - comprising two electrodes and an insulating layer, with a layer of charge-trapping materials

Publications (2)

Publication Number Publication Date
FR2395606A1 true FR2395606A1 (en) 1979-01-19
FR2395606B1 FR2395606B1 (en) 1980-03-14

Family

ID=9204595

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7804188A Granted FR2395606A1 (en) 1978-02-08 1978-02-08 High capacity thin film capacitor structure - comprising two electrodes and an insulating layer, with a layer of charge-trapping materials

Country Status (1)

Country Link
FR (1) FR2395606A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016246A1 (en) * 1979-02-15 1980-10-01 International Business Machines Corporation Semiconductor field effect structure of the Metal-Insulator-Metal or Metal-Insulator-Semiconductor type, and memory device comprising such structure
EP0308814A2 (en) * 1987-09-21 1989-03-29 National Semiconductor Corporation Modification of interfacial fields between dielectrics and semiconductors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2056947A1 (en) * 1970-11-20 1972-06-29 Fraunhofer Ges Forschung Mos surface stabilization - by ion implantation and tempering in hydrogen atmosphere
US3945031A (en) * 1973-12-10 1976-03-16 Bell Telephone Laboratories, Incorporated Charge effects in doped silicon dioxide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2056947A1 (en) * 1970-11-20 1972-06-29 Fraunhofer Ges Forschung Mos surface stabilization - by ion implantation and tempering in hydrogen atmosphere
US3945031A (en) * 1973-12-10 1976-03-16 Bell Telephone Laboratories, Incorporated Charge effects in doped silicon dioxide

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV1046/75 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016246A1 (en) * 1979-02-15 1980-10-01 International Business Machines Corporation Semiconductor field effect structure of the Metal-Insulator-Metal or Metal-Insulator-Semiconductor type, and memory device comprising such structure
EP0308814A2 (en) * 1987-09-21 1989-03-29 National Semiconductor Corporation Modification of interfacial fields between dielectrics and semiconductors
EP0308814A3 (en) * 1987-09-21 1989-04-26 National Semiconductor Corporation Modification of interfacial fields between dielectrics amodification of interfacial fields between dielectrics and semiconductors nd semiconductors
US6117749A (en) * 1987-09-21 2000-09-12 National Semiconductor Corporation Modification of interfacial fields between dielectrics and semiconductors

Also Published As

Publication number Publication date
FR2395606B1 (en) 1980-03-14

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Legal Events

Date Code Title Description
ST Notification of lapse