FR2379167A1 - Output stage for semiconductor charge transfer circuit - has second electrode insulated from substrate which can be charged by continuous voltage - Google Patents

Output stage for semiconductor charge transfer circuit - has second electrode insulated from substrate which can be charged by continuous voltage

Info

Publication number
FR2379167A1
FR2379167A1 FR7801652A FR7801652A FR2379167A1 FR 2379167 A1 FR2379167 A1 FR 2379167A1 FR 7801652 A FR7801652 A FR 7801652A FR 7801652 A FR7801652 A FR 7801652A FR 2379167 A1 FR2379167 A1 FR 2379167A1
Authority
FR
France
Prior art keywords
substrate
region
charged
charge transfer
output stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7801652A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2379167A1 publication Critical patent/FR2379167A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)

Abstract

The output stage for a semiconductor charge transfer circuit has a series of insulating layer or blocking layer capacitors. These capacitors are arranged on a doped semiconductor surface of a substrate. The circuit has a first region arranged on the surface of the substrate which is doped oppositely to the surface. This region can be connected via the substrate to a capacitor of the series and also to an input of an output amplifier. The circuit has a second region separated from the first. This second region being deposited on the surface of the substrate and it is oppositely dopes to the substrate. The region is connected to a contact, accessible from the exterior. The second region has an electrode arranged above the space. This electrode is separated from the substrate by an electrically insulating layer and can be charged by determined voltages.
FR7801652A 1977-01-27 1978-01-20 Output stage for semiconductor charge transfer circuit - has second electrode insulated from substrate which can be charged by continuous voltage Withdrawn FR2379167A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772703359 DE2703359A1 (en) 1977-01-27 1977-01-27 OUTPUT STAGE FOR A LOAD SHIFTING DEVICE

Publications (1)

Publication Number Publication Date
FR2379167A1 true FR2379167A1 (en) 1978-08-25

Family

ID=5999701

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7801652A Withdrawn FR2379167A1 (en) 1977-01-27 1978-01-20 Output stage for semiconductor charge transfer circuit - has second electrode insulated from substrate which can be charged by continuous voltage

Country Status (5)

Country Link
JP (1) JPS5394152A (en)
BE (1) BE863399A (en)
DE (1) DE2703359A1 (en)
FR (1) FR2379167A1 (en)
IT (1) IT1092141B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0096166A2 (en) * 1982-06-07 1983-12-21 International Business Machines Corporation Charge coupled device and circuit arrangement for its operation

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3028727A1 (en) * 1980-07-29 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Floating diffusion output stage for CCD - prevents reset noise by additional reset gate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0096166A2 (en) * 1982-06-07 1983-12-21 International Business Machines Corporation Charge coupled device and circuit arrangement for its operation
EP0096166A3 (en) * 1982-06-07 1986-03-19 International Business Machines Corporation Charge coupled device and circuit arrangement for its operation

Also Published As

Publication number Publication date
BE863399A (en) 1978-05-16
DE2703359A1 (en) 1978-08-03
JPS5394152A (en) 1978-08-17
IT1092141B (en) 1985-07-06
IT7819649A0 (en) 1978-01-26

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Legal Events

Date Code Title Description
ST Notification of lapse