FR2386942A1 - CCD charge transfer measurement - relies on potential changes in capacitor connected to floating gate and uses voltage source and switch - Google Patents

CCD charge transfer measurement - relies on potential changes in capacitor connected to floating gate and uses voltage source and switch

Info

Publication number
FR2386942A1
FR2386942A1 FR7807534A FR7807534A FR2386942A1 FR 2386942 A1 FR2386942 A1 FR 2386942A1 FR 7807534 A FR7807534 A FR 7807534A FR 7807534 A FR7807534 A FR 7807534A FR 2386942 A1 FR2386942 A1 FR 2386942A1
Authority
FR
France
Prior art keywords
relies
charge
switch
voltage source
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7807534A
Other languages
French (fr)
Other versions
FR2386942B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2386942A1 publication Critical patent/FR2386942A1/en
Application granted granted Critical
Publication of FR2386942B1 publication Critical patent/FR2386942B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/10—Measuring sum, difference or ratio
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A method is used of measuring the transfer charge during the operation of a charge-coupled device. It relies on the connection of a capacitor to a gate electrode. A simple device comprises a semiconductor substrate (10) with a number of electrodes (12, 22, 24) separated therefrom by an insulating layer of silicia of silicon nitride. A floating gate electrode (12) is connected to a common charge capacitor (CL), a voltage source (13) and a switch (15). On either side of the gate are transfer electrodes (18, 20) connected to a pulse generator to transfer charge into and out of the associated potential well (16). Auxiliary gate electrodes (22, 24) with associated potential wells (26, 28) are on the other side of the transfer electrodes. Charge transfer results in the change of potential of the capacitor (CL) which can readily be measured.
FR7807534A 1977-04-07 1978-03-07 CCD charge transfer measurement - relies on potential changes in capacitor connected to floating gate and uses voltage source and switch Granted FR2386942A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78572377A 1977-04-07 1977-04-07

Publications (2)

Publication Number Publication Date
FR2386942A1 true FR2386942A1 (en) 1978-11-03
FR2386942B1 FR2386942B1 (en) 1982-07-23

Family

ID=25136433

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7807534A Granted FR2386942A1 (en) 1977-04-07 1978-03-07 CCD charge transfer measurement - relies on potential changes in capacitor connected to floating gate and uses voltage source and switch

Country Status (5)

Country Link
JP (1) JPS53125872A (en)
CA (1) CA1099409A (en)
DE (1) DE2811146A1 (en)
FR (1) FR2386942A1 (en)
IT (1) IT1113115B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015446A1 (en) * 1979-03-09 1980-09-17 International Business Machines Corporation Non-destructive charge transfer device differencing circuit
EP0019506A1 (en) * 1979-05-04 1980-11-26 Thomson-Csf Charge substraction and charge quantity generation transfer device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2936704A1 (en) * 1979-09-11 1981-03-26 Siemens AG, 1000 Berlin und 8000 München MONOLITHICALLY INTEGRATED CIRCUIT WITH A TWO-DIMENSIONAL IMAGE SENSOR
DE2939490A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München MONOLITHICALLY INTEGRATED TWO-DIMENSIONAL IMAGE SENSOR WITH A DIFFERENTIAL LEVEL
US4639678A (en) * 1983-12-30 1987-01-27 International Business Machines Corporation Absolute charge difference detection method and structure for a charge coupled device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
FR2365245A1 (en) * 1976-09-15 1978-04-14 Hughes Aircraft Co SUBTRACTION CIRCUIT WITH LOAD COUPLING DEVICES

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
FR2365245A1 (en) * 1976-09-15 1978-04-14 Hughes Aircraft Co SUBTRACTION CIRCUIT WITH LOAD COUPLING DEVICES

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015446A1 (en) * 1979-03-09 1980-09-17 International Business Machines Corporation Non-destructive charge transfer device differencing circuit
EP0019506A1 (en) * 1979-05-04 1980-11-26 Thomson-Csf Charge substraction and charge quantity generation transfer device

Also Published As

Publication number Publication date
CA1099409A (en) 1981-04-14
IT1113115B (en) 1986-01-20
JPS53125872A (en) 1978-11-02
IT7821405A0 (en) 1978-03-21
FR2386942B1 (en) 1982-07-23
DE2811146A1 (en) 1978-10-19

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Legal Events

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