JPS6418269A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6418269A
JPS6418269A JP62174542A JP17454287A JPS6418269A JP S6418269 A JPS6418269 A JP S6418269A JP 62174542 A JP62174542 A JP 62174542A JP 17454287 A JP17454287 A JP 17454287A JP S6418269 A JPS6418269 A JP S6418269A
Authority
JP
Japan
Prior art keywords
center
insulating film
electrons
memory cell
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62174542A
Other languages
Japanese (ja)
Inventor
Eiji Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP62174542A priority Critical patent/JPS6418269A/en
Publication of JPS6418269A publication Critical patent/JPS6418269A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To simplify a memory cell structure by generating the capture center of electrons at a gate insulating film compulsorily, thereby causing its center to capture the electrons. CONSTITUTION:A memory cell has a substrate; for example, a p-type silicon substrate as a semiconductor substrate 11 and regions, for example, n<+> type source and drain regions 12 and 13 are formed at the surface of the above silicon substrate and further, on these regions 12 and 13 a gate electrode 15 is formed through a gate insulating film 14 consisting of SiO2 and the like. Then the prescribed voltage which is impressed on the gate electrode 15 makes the capture center of electrons develop in the gate insulating film 14 and permits its center to accumulate electric charge so as to keep the information of memory. A memory cell structure is simplified in this way.
JP62174542A 1987-07-13 1987-07-13 Semiconductor memory device Pending JPS6418269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62174542A JPS6418269A (en) 1987-07-13 1987-07-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62174542A JPS6418269A (en) 1987-07-13 1987-07-13 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6418269A true JPS6418269A (en) 1989-01-23

Family

ID=15980365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62174542A Pending JPS6418269A (en) 1987-07-13 1987-07-13 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6418269A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03189374A (en) * 1989-12-20 1991-08-19 Mitsubishi Heavy Ind Ltd Variable blade for windmill

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03189374A (en) * 1989-12-20 1991-08-19 Mitsubishi Heavy Ind Ltd Variable blade for windmill

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