JPS5670657A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5670657A
JPS5670657A JP14732279A JP14732279A JPS5670657A JP S5670657 A JPS5670657 A JP S5670657A JP 14732279 A JP14732279 A JP 14732279A JP 14732279 A JP14732279 A JP 14732279A JP S5670657 A JPS5670657 A JP S5670657A
Authority
JP
Japan
Prior art keywords
oxide film
layer
memory cell
film
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14732279A
Other languages
Japanese (ja)
Other versions
JPS6322069B2 (en
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14732279A priority Critical patent/JPS5670657A/en
Publication of JPS5670657A publication Critical patent/JPS5670657A/en
Publication of JPS6322069B2 publication Critical patent/JPS6322069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a dynamic memory preventing the occurrence of improper memory cell on account of the microminiaturization and increase in capacity of the memory by using electrostatic capacity due to buried insulating film formed within a semiconductor substrate as a memory cell capacity. CONSTITUTION:A field oxide film 24 is formed on a p type Si substrate 21. Then, nitrogen ion is selectively implanted on an MOS capacitor forming region using a mask, and a buried insulating film 25 is formed. Subsequently, phosphorus is implanted, and an n<+> type layer 26 is formed thereon. Thereafter, a polycrystalline silicon layer 28 is formed on the gate oxide film 27, a gate oxide film 29 and a polycrystalline film 30 are sequentially laminated thereon, holes are opened thereat, and n<+> type drain and bit wire 31 is formed therethrough. Then, an oxide film 32 is accumulated thereon, and a word line 33 is formed. Since the layer 26 is isolated from the layer 25 in this manner, it can eliminate the thermally produced carrier at the p-n junction and software error due to the alpha rays, thereby preventing the occurrence of improper memory cell.
JP14732279A 1979-11-14 1979-11-14 Semiconductor memory device Granted JPS5670657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14732279A JPS5670657A (en) 1979-11-14 1979-11-14 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14732279A JPS5670657A (en) 1979-11-14 1979-11-14 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5670657A true JPS5670657A (en) 1981-06-12
JPS6322069B2 JPS6322069B2 (en) 1988-05-10

Family

ID=15427554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14732279A Granted JPS5670657A (en) 1979-11-14 1979-11-14 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5670657A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107571A (en) * 1980-01-30 1981-08-26 Fujitsu Ltd Semiconductor memory storage device
JPS58125863A (en) * 1981-12-29 1983-07-27 Fujitsu Ltd Semiconductor device
US4586789A (en) * 1982-10-08 1986-05-06 Hitachi, Ltd. Liquid crystal display unit with particular electrode terminal groupings
US4903094A (en) * 1986-08-26 1990-02-20 General Electric Company Memory cell structure having radiation hardness
US5264712A (en) * 1989-03-20 1993-11-23 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
US5734188A (en) * 1987-09-19 1998-03-31 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
US5917211A (en) * 1988-09-19 1999-06-29 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637663A (en) * 1979-09-05 1981-04-11 Mitsubishi Electric Corp Capacitor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637663A (en) * 1979-09-05 1981-04-11 Mitsubishi Electric Corp Capacitor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107571A (en) * 1980-01-30 1981-08-26 Fujitsu Ltd Semiconductor memory storage device
JPH0131308B2 (en) * 1980-01-30 1989-06-26 Fujitsu Ltd
JPS58125863A (en) * 1981-12-29 1983-07-27 Fujitsu Ltd Semiconductor device
JPS602780B2 (en) * 1981-12-29 1985-01-23 富士通株式会社 semiconductor equipment
US4586789A (en) * 1982-10-08 1986-05-06 Hitachi, Ltd. Liquid crystal display unit with particular electrode terminal groupings
US4903094A (en) * 1986-08-26 1990-02-20 General Electric Company Memory cell structure having radiation hardness
US5734188A (en) * 1987-09-19 1998-03-31 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
US5917211A (en) * 1988-09-19 1999-06-29 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
US5264712A (en) * 1989-03-20 1993-11-23 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same

Also Published As

Publication number Publication date
JPS6322069B2 (en) 1988-05-10

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