JPS5792861A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5792861A
JPS5792861A JP55170651A JP17065180A JPS5792861A JP S5792861 A JPS5792861 A JP S5792861A JP 55170651 A JP55170651 A JP 55170651A JP 17065180 A JP17065180 A JP 17065180A JP S5792861 A JPS5792861 A JP S5792861A
Authority
JP
Japan
Prior art keywords
layer
main surface
transfer transistor
constitution
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55170651A
Other languages
Japanese (ja)
Other versions
JPS5834949B2 (en
Inventor
Makoto Hirayama
Tadashi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55170651A priority Critical patent/JPS5834949B2/en
Publication of JPS5792861A publication Critical patent/JPS5792861A/en
Publication of JPS5834949B2 publication Critical patent/JPS5834949B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate

Abstract

PURPOSE:To increase integration degree, by providing a similarly conductive semiconductor layer on the main surface of a semiconductor substrate, and installing a memory capacitor thereupon and a transfer transistor on its side. CONSTITUTION:A P type Si-substrate 11 is separated at an SiO2 layer 12. A P layer 13 is accumulated on its main surface selectively. A bit line of N<+> diffusion layer 14 is made on its main surface. A memory capacitor is constituted by covering with an SiO2 film 15 and piling up a poly Si layer 17 on the P layer 13. A field effect transfer transistor is constituted as a channel of the layer 13 side 18. This constitution arranges the transfer transistor vertically. The area occupancy is reduced and the integration degree is increased.
JP55170651A 1980-12-01 1980-12-01 semiconductor memory device Expired JPS5834949B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170651A JPS5834949B2 (en) 1980-12-01 1980-12-01 semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170651A JPS5834949B2 (en) 1980-12-01 1980-12-01 semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5792861A true JPS5792861A (en) 1982-06-09
JPS5834949B2 JPS5834949B2 (en) 1983-07-29

Family

ID=15908824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170651A Expired JPS5834949B2 (en) 1980-12-01 1980-12-01 semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5834949B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965466A (en) * 1982-10-05 1984-04-13 Matsushita Electronics Corp Semiconductor memory device
JPS60257560A (en) * 1984-06-04 1985-12-19 Mitsubishi Electric Corp Semiconductor memory device
JPS61222255A (en) * 1985-03-28 1986-10-02 Fujitsu Ltd Manufacture of semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965466A (en) * 1982-10-05 1984-04-13 Matsushita Electronics Corp Semiconductor memory device
JPH0437590B2 (en) * 1982-10-05 1992-06-19 Matsushita Electronics Corp
JPS60257560A (en) * 1984-06-04 1985-12-19 Mitsubishi Electric Corp Semiconductor memory device
JPS61222255A (en) * 1985-03-28 1986-10-02 Fujitsu Ltd Manufacture of semiconductor memory device

Also Published As

Publication number Publication date
JPS5834949B2 (en) 1983-07-29

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