JPS5342560A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5342560A JPS5342560A JP11775476A JP11775476A JPS5342560A JP S5342560 A JPS5342560 A JP S5342560A JP 11775476 A JP11775476 A JP 11775476A JP 11775476 A JP11775476 A JP 11775476A JP S5342560 A JPS5342560 A JP S5342560A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- production
- semiconductor device
- windows
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To obtain high density LSI of high breakdown voltage between drains and substrate and high gm of load MOS transistors by depositing a SiO2 film and photosensitive resin on a Si substrate, opening windows therein, softening the resin through heating to reduce the size of the windows thereafter forming each region through implanting impurity ions.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11775476A JPS5342560A (en) | 1976-09-29 | 1976-09-29 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11775476A JPS5342560A (en) | 1976-09-29 | 1976-09-29 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5342560A true JPS5342560A (en) | 1978-04-18 |
Family
ID=14719484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11775476A Pending JPS5342560A (en) | 1976-09-29 | 1976-09-29 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5342560A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56137650A (en) * | 1980-03-28 | 1981-10-27 | Nec Corp | Manufacture of semiconductor device |
JPS5736845A (en) * | 1980-08-15 | 1982-02-27 | Seiko Epson Corp | Manufacture of selectively oxidized mask |
US4916802A (en) * | 1983-12-27 | 1990-04-17 | Ngk Insulators, Ltd. | Method for producing a magnetic head core |
-
1976
- 1976-09-29 JP JP11775476A patent/JPS5342560A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56137650A (en) * | 1980-03-28 | 1981-10-27 | Nec Corp | Manufacture of semiconductor device |
JPS5736845A (en) * | 1980-08-15 | 1982-02-27 | Seiko Epson Corp | Manufacture of selectively oxidized mask |
US4916802A (en) * | 1983-12-27 | 1990-04-17 | Ngk Insulators, Ltd. | Method for producing a magnetic head core |
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