JPS54112183A - Mos type integrated-circuit device and its manufacture - Google Patents

Mos type integrated-circuit device and its manufacture

Info

Publication number
JPS54112183A
JPS54112183A JP1944378A JP1944378A JPS54112183A JP S54112183 A JPS54112183 A JP S54112183A JP 1944378 A JP1944378 A JP 1944378A JP 1944378 A JP1944378 A JP 1944378A JP S54112183 A JPS54112183 A JP S54112183A
Authority
JP
Japan
Prior art keywords
film
channel
oxidized
type region
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1944378A
Other languages
Japanese (ja)
Inventor
Matsuo Ichinose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP1944378A priority Critical patent/JPS54112183A/en
Publication of JPS54112183A publication Critical patent/JPS54112183A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase a degree of integration with a dead zone between P and N channel regions, by forming 1st layer wiring and 2nd layer wiring, provided onto a field, by self-alignment.
CONSTITUTION: Into N-type Si substrate 1, ions are implanted by using oxidized film 2 and resist film 3 as masks to form P-channel N--type region 4. Next, films 2 and 3 are removed, region 4 is covered with oxidized film 5 and resist film 6, and N-channel P--type region 7 is formed on exposed substrate 1 through ion implantation. Then, films 5 and 6 are removed, field oxidized films 8, oxidized film 9 positioned between them, and nitride film 10 covering the entire surface are adhered, and fixed regions are removed to form gate oxidized film 11 and gate wiring 12 on it. Through ion implantation, P-channel P+-type region 13 and N- channel N+-type region 14 are both provided and then covered with SiO2 film 15, an opening is made to adhere poly-crystal Si layer 16 and Al film 17 is vapor- deposited.
COPYRIGHT: (C)1979,JPO&Japio
JP1944378A 1978-02-22 1978-02-22 Mos type integrated-circuit device and its manufacture Pending JPS54112183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1944378A JPS54112183A (en) 1978-02-22 1978-02-22 Mos type integrated-circuit device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1944378A JPS54112183A (en) 1978-02-22 1978-02-22 Mos type integrated-circuit device and its manufacture

Publications (1)

Publication Number Publication Date
JPS54112183A true JPS54112183A (en) 1979-09-01

Family

ID=11999437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1944378A Pending JPS54112183A (en) 1978-02-22 1978-02-22 Mos type integrated-circuit device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54112183A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646558A (en) * 1979-09-25 1981-04-27 Sony Corp Semiconductor device
JPS56152260A (en) * 1980-04-25 1981-11-25 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS57106068A (en) * 1980-12-23 1982-07-01 Seiko Epson Corp Manufacture of semiconductor device
JPS59197163A (en) * 1983-04-25 1984-11-08 Nec Corp C-mos type semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646558A (en) * 1979-09-25 1981-04-27 Sony Corp Semiconductor device
JPH0143468B2 (en) * 1979-09-25 1989-09-20 Sony Corp
JPS56152260A (en) * 1980-04-25 1981-11-25 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS57106068A (en) * 1980-12-23 1982-07-01 Seiko Epson Corp Manufacture of semiconductor device
JPS59197163A (en) * 1983-04-25 1984-11-08 Nec Corp C-mos type semiconductor device

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