JPS54112183A - Mos type integrated-circuit device and its manufacture - Google Patents
Mos type integrated-circuit device and its manufactureInfo
- Publication number
- JPS54112183A JPS54112183A JP1944378A JP1944378A JPS54112183A JP S54112183 A JPS54112183 A JP S54112183A JP 1944378 A JP1944378 A JP 1944378A JP 1944378 A JP1944378 A JP 1944378A JP S54112183 A JPS54112183 A JP S54112183A
- Authority
- JP
- Japan
- Prior art keywords
- film
- channel
- oxidized
- type region
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To increase a degree of integration with a dead zone between P and N channel regions, by forming 1st layer wiring and 2nd layer wiring, provided onto a field, by self-alignment.
CONSTITUTION: Into N-type Si substrate 1, ions are implanted by using oxidized film 2 and resist film 3 as masks to form P-channel N--type region 4. Next, films 2 and 3 are removed, region 4 is covered with oxidized film 5 and resist film 6, and N-channel P--type region 7 is formed on exposed substrate 1 through ion implantation. Then, films 5 and 6 are removed, field oxidized films 8, oxidized film 9 positioned between them, and nitride film 10 covering the entire surface are adhered, and fixed regions are removed to form gate oxidized film 11 and gate wiring 12 on it. Through ion implantation, P-channel P+-type region 13 and N- channel N+-type region 14 are both provided and then covered with SiO2 film 15, an opening is made to adhere poly-crystal Si layer 16 and Al film 17 is vapor- deposited.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1944378A JPS54112183A (en) | 1978-02-22 | 1978-02-22 | Mos type integrated-circuit device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1944378A JPS54112183A (en) | 1978-02-22 | 1978-02-22 | Mos type integrated-circuit device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54112183A true JPS54112183A (en) | 1979-09-01 |
Family
ID=11999437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1944378A Pending JPS54112183A (en) | 1978-02-22 | 1978-02-22 | Mos type integrated-circuit device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54112183A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5646558A (en) * | 1979-09-25 | 1981-04-27 | Sony Corp | Semiconductor device |
JPS56152260A (en) * | 1980-04-25 | 1981-11-25 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS57106068A (en) * | 1980-12-23 | 1982-07-01 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS59197163A (en) * | 1983-04-25 | 1984-11-08 | Nec Corp | C-mos type semiconductor device |
-
1978
- 1978-02-22 JP JP1944378A patent/JPS54112183A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5646558A (en) * | 1979-09-25 | 1981-04-27 | Sony Corp | Semiconductor device |
JPH0143468B2 (en) * | 1979-09-25 | 1989-09-20 | Sony Corp | |
JPS56152260A (en) * | 1980-04-25 | 1981-11-25 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS57106068A (en) * | 1980-12-23 | 1982-07-01 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS59197163A (en) * | 1983-04-25 | 1984-11-08 | Nec Corp | C-mos type semiconductor device |
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