JPS56152260A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56152260A
JPS56152260A JP5429680A JP5429680A JPS56152260A JP S56152260 A JPS56152260 A JP S56152260A JP 5429680 A JP5429680 A JP 5429680A JP 5429680 A JP5429680 A JP 5429680A JP S56152260 A JPS56152260 A JP S56152260A
Authority
JP
Japan
Prior art keywords
source
cmis
substrate
type
bip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5429680A
Other languages
Japanese (ja)
Inventor
Noboru Umezawa
Satoru Oura
Jun Kanamori
Hideki Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP5429680A priority Critical patent/JPS56152260A/en
Publication of JPS56152260A publication Critical patent/JPS56152260A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive the improvement of driving capability and switching characteristics by providing an emitter in the source at a P-channel side wherein a BIP consisting a source and a substrate as a base and a collector respectively are incorporated in a CMIS without accompanying an increase of area. CONSTITUTION:A P well 22 is provided in an N type Si substrate 21 and a P type source 271 and a drain 272 are provided at the substrate side and an N type source 291 and a drain 292 at a P well side to compose a CMIS. A BIP consisting the source 271 and the substrate 21 as a base and a collector respectively is composed by forming an N type emitter 32 in the source 271 at the P channel side. The CMIS structure is formed by a self allignment process by using an Si gate technique. In this way, the BIP improving driving capability and switching characteristics can incoporate in the CMIS without requiring an excessive area and the improvement of characteristics can be attained without missing high density.
JP5429680A 1980-04-25 1980-04-25 Manufacture of semiconductor device Pending JPS56152260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5429680A JPS56152260A (en) 1980-04-25 1980-04-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5429680A JPS56152260A (en) 1980-04-25 1980-04-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56152260A true JPS56152260A (en) 1981-11-25

Family

ID=12966599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5429680A Pending JPS56152260A (en) 1980-04-25 1980-04-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56152260A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583363A (en) * 1989-01-30 1996-12-10 Kabushiki Kaisha Toshiba Inverter gate circuit of a bi-CMOS structure having common layers between fets and bipolar transistors

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53113482A (en) * 1977-03-15 1978-10-03 Fujitsu Ltd Production of semiconductor device
JPS5446489A (en) * 1977-09-20 1979-04-12 Oki Electric Ind Co Ltd Manufacture of complementary mos gate circuit device
JPS5487491A (en) * 1977-12-23 1979-07-11 Seiko Epson Corp Semiconductor integrated-circuit device
JPS54112183A (en) * 1978-02-22 1979-09-01 Seiko Epson Corp Mos type integrated-circuit device and its manufacture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53113482A (en) * 1977-03-15 1978-10-03 Fujitsu Ltd Production of semiconductor device
JPS5446489A (en) * 1977-09-20 1979-04-12 Oki Electric Ind Co Ltd Manufacture of complementary mos gate circuit device
JPS5487491A (en) * 1977-12-23 1979-07-11 Seiko Epson Corp Semiconductor integrated-circuit device
JPS54112183A (en) * 1978-02-22 1979-09-01 Seiko Epson Corp Mos type integrated-circuit device and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583363A (en) * 1989-01-30 1996-12-10 Kabushiki Kaisha Toshiba Inverter gate circuit of a bi-CMOS structure having common layers between fets and bipolar transistors

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