JPS53113482A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53113482A
JPS53113482A JP2824677A JP2824677A JPS53113482A JP S53113482 A JPS53113482 A JP S53113482A JP 2824677 A JP2824677 A JP 2824677A JP 2824677 A JP2824677 A JP 2824677A JP S53113482 A JPS53113482 A JP S53113482A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
mos
gas flow
electrode wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2824677A
Other languages
Japanese (ja)
Other versions
JPS6047749B2 (en
Inventor
Katsuyuki Inayoshi
Masataka Shinguu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52028246A priority Critical patent/JPS6047749B2/en
Publication of JPS53113482A publication Critical patent/JPS53113482A/en
Publication of JPS6047749B2 publication Critical patent/JPS6047749B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To readily remove contact defect by gas flow in a C-MOS IC by making positive use of the junction short phenomenon of shallow diffused layers by Al electrode wirings.
JP52028246A 1977-03-15 1977-03-15 Manufacturing method of semiconductor device Expired JPS6047749B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52028246A JPS6047749B2 (en) 1977-03-15 1977-03-15 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52028246A JPS6047749B2 (en) 1977-03-15 1977-03-15 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53113482A true JPS53113482A (en) 1978-10-03
JPS6047749B2 JPS6047749B2 (en) 1985-10-23

Family

ID=12243214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52028246A Expired JPS6047749B2 (en) 1977-03-15 1977-03-15 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6047749B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152260A (en) * 1980-04-25 1981-11-25 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS58209145A (en) * 1982-05-14 1983-12-06 シ−メンス・アクチエンゲゼルシヤフト Method of producing integrated mos field effect transistor circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152260A (en) * 1980-04-25 1981-11-25 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS58209145A (en) * 1982-05-14 1983-12-06 シ−メンス・アクチエンゲゼルシヤフト Method of producing integrated mos field effect transistor circuit

Also Published As

Publication number Publication date
JPS6047749B2 (en) 1985-10-23

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