JPS5667970A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS5667970A
JPS5667970A JP14347079A JP14347079A JPS5667970A JP S5667970 A JPS5667970 A JP S5667970A JP 14347079 A JP14347079 A JP 14347079A JP 14347079 A JP14347079 A JP 14347079A JP S5667970 A JPS5667970 A JP S5667970A
Authority
JP
Japan
Prior art keywords
area
type
type base
short
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14347079A
Other languages
Japanese (ja)
Inventor
Hiroyasu Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14347079A priority Critical patent/JPS5667970A/en
Publication of JPS5667970A publication Critical patent/JPS5667970A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To reduce a turn-off time by a method wherein an n type base layer is constituted with a high resistance base layer contacting with a p type base and a low resistance base layer which contacts with a p type emitter and short-circuits the p type emitter through a part. CONSTITUTION:A gate turn-off thyristor is constituted with an n type emitter area 4, a p type base area 2, an n type base area 1a, and a p type emitter area 3a. And the n type base area 1a consists of a high resistance n type base area 11 which is adjacent to the area 2 and a low resistance n type base area 12 which is adjacent to the area 3a. And the area 12 is made to have a part which short-circuits the area 3 in the principal surface of a semiconductor substrate. It is desirous that this short-circuit part is formed in a part facing toward each island in the n type emitter area. On this account, the carrier being full in the high resistance base area is pulled out through the short-circuit part during an off gate bias time, thus, reducing a turn-off time.
JP14347079A 1979-11-05 1979-11-05 Gate turn-off thyristor Pending JPS5667970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14347079A JPS5667970A (en) 1979-11-05 1979-11-05 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14347079A JPS5667970A (en) 1979-11-05 1979-11-05 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5667970A true JPS5667970A (en) 1981-06-08

Family

ID=15339445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14347079A Pending JPS5667970A (en) 1979-11-05 1979-11-05 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5667970A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58132972A (en) * 1982-02-02 1983-08-08 Fuji Electric Corp Res & Dev Ltd High speed photo thyristor
EP0270975A2 (en) * 1986-12-01 1988-06-15 Kabushiki Kaisha Toshiba Semiconductor switching device with anode shorting structure
JPS63265465A (en) * 1986-12-01 1988-11-01 Toshiba Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58132972A (en) * 1982-02-02 1983-08-08 Fuji Electric Corp Res & Dev Ltd High speed photo thyristor
EP0270975A2 (en) * 1986-12-01 1988-06-15 Kabushiki Kaisha Toshiba Semiconductor switching device with anode shorting structure
JPS63265465A (en) * 1986-12-01 1988-11-01 Toshiba Corp Semiconductor device

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