JPS56116665A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56116665A
JPS56116665A JP2017980A JP2017980A JPS56116665A JP S56116665 A JPS56116665 A JP S56116665A JP 2017980 A JP2017980 A JP 2017980A JP 2017980 A JP2017980 A JP 2017980A JP S56116665 A JPS56116665 A JP S56116665A
Authority
JP
Japan
Prior art keywords
layer
thin
current
thick
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017980A
Other languages
Japanese (ja)
Other versions
JPH0142145B2 (en
Inventor
Sumuto Seko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2017980A priority Critical patent/JPS56116665A/en
Publication of JPS56116665A publication Critical patent/JPS56116665A/en
Publication of JPH0142145B2 publication Critical patent/JPH0142145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To make it possible to control turn-on time by constituting the N<+> emitter layer on the cathode side by thick and thin portions and forming an N<+> layer in the P layer on the anode side. CONSTITUTION:P type anode and base regions 3 and 2 are formed on both main surface sides on an N type substrate 1, and an N<+> emitter layer consisting of the thick and thin portions 4 and 8 is formed in said region 2. On the other hand, an N<+> layer 9 is formed in the region 3. Thus providing the thin portion 8 in the layer 4 permits the lateral spreading speed of current at this portion to be decreased. Moreover, by the presence of the partial layer 9 provided in the layer 3, the injection of holes from the layer 9 is locally restricted, a cross-current thyristor is formed when turning on, and the substantial spreading speed can be controlled. Thus, by properly arranging the thin emitter layer and the N<+> layer portion on the anode side and varying their widths in the current spreading direction, turn-on time can be controlled.
JP2017980A 1980-02-19 1980-02-19 Semiconductor device Granted JPS56116665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2017980A JPS56116665A (en) 1980-02-19 1980-02-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017980A JPS56116665A (en) 1980-02-19 1980-02-19 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56116665A true JPS56116665A (en) 1981-09-12
JPH0142145B2 JPH0142145B2 (en) 1989-09-11

Family

ID=12019944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017980A Granted JPS56116665A (en) 1980-02-19 1980-02-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56116665A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509155A (en) * 1973-05-29 1975-01-30
JPS5019036A (en) * 1973-06-21 1975-02-28
JPS5271378U (en) * 1975-11-20 1977-05-27
JPS5427785A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509155A (en) * 1973-05-29 1975-01-30
JPS5019036A (en) * 1973-06-21 1975-02-28
JPS5271378U (en) * 1975-11-20 1977-05-27
JPS5427785A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated circuit

Also Published As

Publication number Publication date
JPH0142145B2 (en) 1989-09-11

Similar Documents

Publication Publication Date Title
JPS6457674A (en) Conductivity-modulation mosfet
JPS5598858A (en) Gate turn-off thyristor
JPS5527641A (en) Semiconductor control element
JPS5778172A (en) Gate turn-off thyristor
JPS54106176A (en) Field effect switching element
JPS56116665A (en) Semiconductor device
JPS57176773A (en) Semiconductor device and manufacture thereof
JPS57188875A (en) Gate turn off thyristor
JPS5667970A (en) Gate turn-off thyristor
SE7910463L (en) CONTROL ELECTRO-REGULATED SEMICONDUCTOR DEVICE
JPS5515202A (en) Semiconductor controlling rectifier
DE68929359D1 (en) Lateral bipolar transistor arrangements with isolated control electrode with split anode
JPS5491074A (en) Semiconductor device
JPS57196569A (en) Bidirectional thyristor
JPS57181162A (en) Gate turn off thyristor
JPS56104467A (en) Reverse conducting thyristor
JPS57128960A (en) Semiconductor device
JPS5650567A (en) Semiconductor controlled rectifier
JPS55103772A (en) Semiconductor device
JPS5771178A (en) Semiconductor device
JPS56126957A (en) Manufacture of semiconductor device
JPS5457973A (en) Semiconductor device for switching control
JPS5387676A (en) Semiconductor control rectifier
JPS54102993A (en) Optical semiconductor device
JPS649659A (en) Semiconductor element