JPS5678164A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5678164A
JPS5678164A JP15430779A JP15430779A JPS5678164A JP S5678164 A JPS5678164 A JP S5678164A JP 15430779 A JP15430779 A JP 15430779A JP 15430779 A JP15430779 A JP 15430779A JP S5678164 A JPS5678164 A JP S5678164A
Authority
JP
Japan
Prior art keywords
region
phosphorus
life
time
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15430779A
Other languages
Japanese (ja)
Inventor
Minoru Azuma
Junko Akagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15430779A priority Critical patent/JPS5678164A/en
Publication of JPS5678164A publication Critical patent/JPS5678164A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Abstract

PURPOSE:To improve ON-OFF characteristics by method wherein a life-time killer such as Au is cover-attached on a region separator of a compound semiconductor element of a bi-lateral thyristor or the like and heat treated in an atmosphere containing phosphrous, and only the region separator is made low in the life time. CONSTITUTION:A PNP structure is formed of a P type layer 12, a P type layer 13 in contrast with that and an N type substrate 11 which become an emitter layer in the first active region and a base layer in the second active region. Then, a heat- oxidized film 14 capable of screening the phosphorus is grown on both sides of the face and the back of the PNP structure, openings 15 and 16 respectively are formed on the surface and the back and the phosphorus is diffused to form the N type emitter regions 17 and 18 respectively. Thus, the PNPN structure is formed in which the two active regions a and b are provided with the region separator c interted therebetween, the Au 31 is attached onto the region c and heat-treated in the atmosphere containing the phosphorus to reduce the life time only of the region c and to prolong the life times of the regions a and b. In such a manner, the withstand dv/dt at the time of commutating is increased.
JP15430779A 1979-11-30 1979-11-30 Manufacture of semiconductor element Pending JPS5678164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15430779A JPS5678164A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15430779A JPS5678164A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5678164A true JPS5678164A (en) 1981-06-26

Family

ID=15581250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15430779A Pending JPS5678164A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5678164A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02125666A (en) * 1988-11-04 1990-05-14 Sharp Corp Photo triac

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02125666A (en) * 1988-11-04 1990-05-14 Sharp Corp Photo triac

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