JPS57112091A - Semiconductor luminescent device - Google Patents

Semiconductor luminescent device

Info

Publication number
JPS57112091A
JPS57112091A JP18734080A JP18734080A JPS57112091A JP S57112091 A JPS57112091 A JP S57112091A JP 18734080 A JP18734080 A JP 18734080A JP 18734080 A JP18734080 A JP 18734080A JP S57112091 A JPS57112091 A JP S57112091A
Authority
JP
Japan
Prior art keywords
layer
type
edge
resonater
light output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18734080A
Other languages
Japanese (ja)
Inventor
Nobuyuki Takagi
Takao Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18734080A priority Critical patent/JPS57112091A/en
Publication of JPS57112091A publication Critical patent/JPS57112091A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the generation of the edge deterioration even if the device is operated at high light output by a method wherein a region which contains high density of conductive impurity which has different conductive type from a substrate is formed in a specified region of a cap layer and an upper clad layer. CONSTITUTION:A semiconductor luminescent device is composed of an n type substrate 1, an n type lower clad layer 5, an n type activated layer 8, a p type upper clad layer 9 and an n type cap layer 10. In a part of the layer 10 except the circumference of 10-50mum from the edge of a resonater high density of p type impurity is diffused to the entire depth of the layer 10 and also in the upper portion of the layer 9. With above configuration, the cap layer 10 near the edge of the resonater contains n type impurity and no conductive path is formed in this region, so that carriers are not recombined near the edge of the resonater. Thus the edge deterioration is hardly generated even if the device is operated at high light output, so that the high light output operation is possible. Further, in above configuration, all respective n types and p types can be reversed.
JP18734080A 1980-12-29 1980-12-29 Semiconductor luminescent device Pending JPS57112091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18734080A JPS57112091A (en) 1980-12-29 1980-12-29 Semiconductor luminescent device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18734080A JPS57112091A (en) 1980-12-29 1980-12-29 Semiconductor luminescent device

Publications (1)

Publication Number Publication Date
JPS57112091A true JPS57112091A (en) 1982-07-12

Family

ID=16204280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18734080A Pending JPS57112091A (en) 1980-12-29 1980-12-29 Semiconductor luminescent device

Country Status (1)

Country Link
JP (1) JPS57112091A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603179A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device
EP0174635A2 (en) * 1984-09-14 1986-03-19 Siemens Aktiengesellschaft Semiconductor laser for a high optical output power with reduced mirror heating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603179A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device
EP0174635A2 (en) * 1984-09-14 1986-03-19 Siemens Aktiengesellschaft Semiconductor laser for a high optical output power with reduced mirror heating

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS57112091A (en) Semiconductor luminescent device
JPS56150862A (en) Semiconductor device
JPS5681982A (en) Power phototransistor
JPS6461964A (en) Semiconductor device
JPS57169273A (en) Semiconductor device
JPS5667970A (en) Gate turn-off thyristor
JPS5425184A (en) Light emitting element of semiconductor
JPS5750480A (en) Constant voltage diode
JPS5753971A (en) Complementary type semiconductor ic device
JPS5678174A (en) Variable capacity diode
JPS5724562A (en) Thyristor
JPS52147088A (en) Light emitting device
JPS547891A (en) Manufacture for planar semiconductor light emission device
JPS5775471A (en) Light emitting diode
JPS5643783A (en) Light emitting diode for optical communication
JPS5779685A (en) Light emitting diode device
JPS5563879A (en) Semiconductor device
JPS5638885A (en) Light emission semiconductor device
JPS51132984A (en) Semiconductor laser device
JPS55111156A (en) Semiconductor device
JPS5730386A (en) Semiconductor light emitting element
JPS57181159A (en) Transistor
JPS54102993A (en) Optical semiconductor device
JPS56104465A (en) Semiconductor device