JPS5775471A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS5775471A JPS5775471A JP15147380A JP15147380A JPS5775471A JP S5775471 A JPS5775471 A JP S5775471A JP 15147380 A JP15147380 A JP 15147380A JP 15147380 A JP15147380 A JP 15147380A JP S5775471 A JPS5775471 A JP S5775471A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- substrate
- junction
- luminous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Abstract
PURPOSE:To obtain high luminous intensity with simple structure by a method wherein a P-N junction is vertically formed to the surface of a substrate and a P electrode and an N electrode are provided at the places away from a luminous region. CONSTITUTION:A semiconductor substrate 11 is composed of an insulating or semiinsulating substrate 12 and an N type epitaxial layer. A P layer 13 is formed at one side of the epitaxial layer with depth reaching the substrate 12. In this way, an N layer 14 consisting of the N type epitaxial layer and the P layer 13 are formed by adjoining right and left to form a P-N junction 15. A P electrode 16 is formed on the surface of the layer 13 and at the side faced to the place adjoining an N layer 14. An N electrode 17 is similarly formed on the surface of the N layer 14 and at the side faced to the place adjoining the P layer 13. In this LED, light is emitted at a luminous region 19 around P-N junction section 15. However, light will not be shielded at the electrodes 16, 17 as the electrodes 16, 17 are provided at the places away from the region 19. Therefore, luminous output can be increased. Furthermore, the LED is simple in configuration and easily made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15147380A JPS5775471A (en) | 1980-10-30 | 1980-10-30 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15147380A JPS5775471A (en) | 1980-10-30 | 1980-10-30 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5775471A true JPS5775471A (en) | 1982-05-12 |
Family
ID=15519277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15147380A Pending JPS5775471A (en) | 1980-10-30 | 1980-10-30 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5775471A (en) |
-
1980
- 1980-10-30 JP JP15147380A patent/JPS5775471A/en active Pending
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