JPS52124885A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS52124885A
JPS52124885A JP4158676A JP4158676A JPS52124885A JP S52124885 A JPS52124885 A JP S52124885A JP 4158676 A JP4158676 A JP 4158676A JP 4158676 A JP4158676 A JP 4158676A JP S52124885 A JPS52124885 A JP S52124885A
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
semiconductor light
mesa structures
bodies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4158676A
Other languages
Japanese (ja)
Inventor
Morio Inoue
Haruyoshi Yamanaka
Tamotsu Uragaki
Shohei Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4158676A priority Critical patent/JPS52124885A/en
Priority to FR7710857A priority patent/FR2348541A1/en
Priority to CA275,962A priority patent/CA1074427A/en
Priority to DE2716205A priority patent/DE2716205C3/en
Priority to GB15124/77A priority patent/GB1553783A/en
Publication of JPS52124885A publication Critical patent/JPS52124885A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Abstract

PURPOSE: To utilize the side face of mesa structures as a reflector and increase luminance by forming plural mesa structures of light emission junction bodies and non-light emitting electrode bodies on a semiconductor substrate, and contacting the top parts to a supporting plate provided with electrode lead-out wirings.
COPYRIGHT: (C)1977,JPO&Japio
JP4158676A 1976-04-12 1976-04-12 Semiconductor light emitting device Pending JPS52124885A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP4158676A JPS52124885A (en) 1976-04-12 1976-04-12 Semiconductor light emitting device
FR7710857A FR2348541A1 (en) 1976-04-12 1977-04-08 SOLID STATE DISPLAY DEVICE
CA275,962A CA1074427A (en) 1976-04-12 1977-04-12 Solid state display apparatus
DE2716205A DE2716205C3 (en) 1976-04-12 1977-04-12 Electroluminescent display device and method for making the same
GB15124/77A GB1553783A (en) 1976-04-12 1977-04-12 Solid state display apparatus and method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4158676A JPS52124885A (en) 1976-04-12 1976-04-12 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS52124885A true JPS52124885A (en) 1977-10-20

Family

ID=12612525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4158676A Pending JPS52124885A (en) 1976-04-12 1976-04-12 Semiconductor light emitting device

Country Status (5)

Country Link
JP (1) JPS52124885A (en)
CA (1) CA1074427A (en)
DE (1) DE2716205C3 (en)
FR (1) FR2348541A1 (en)
GB (1) GB1553783A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63120287U (en) * 1986-12-29 1988-08-03
JP2007189242A (en) * 2000-08-08 2007-07-26 Osram Opto Semiconductors Gmbh Opto-electronics semiconductor chip and its manufacturing method
JP2008244309A (en) * 2007-03-28 2008-10-09 Fujitsu Ltd Semiconductor light-emitting element and manufacturing method therefor
US7511311B2 (en) 2002-08-01 2009-03-31 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US7547921B2 (en) 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
JP2012044232A (en) * 2011-12-02 2012-03-01 Toshiba Corp Semiconductor light emitting device
US9853188B2 (en) 2010-04-12 2017-12-26 Osram Opto Semiconductors Gmbh Light-emitting diode chip with current spreading layer

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926803A1 (en) * 1979-07-03 1981-02-12 Licentia Gmbh ELECTROLUMINESCENCE ARRANGEMENT
DE2949245A1 (en) * 1979-12-07 1981-06-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Semiconductor light emitting diode - has insulated electrodes on opposite side of semiconductor body to that of light emission
JPH0752779B2 (en) * 1987-12-09 1995-06-05 日立電線株式会社 Light emitting diode array
DE10038671A1 (en) * 2000-08-08 2002-02-28 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip has recesses formed in active layer such that cross-sectional area of the recesses decreases with increasing depth into active layer from bonding side
DE102016116986A1 (en) 2016-09-09 2018-03-15 Osram Opto Semiconductors Gmbh Component for displaying a pictogram and method for producing a component

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495585A (en) * 1972-05-04 1974-01-18
JPS4979489A (en) * 1972-12-04 1974-07-31

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1817307A1 (en) * 1968-01-04 1969-08-14 Western Electric Co Playback devices
US3900864A (en) * 1973-05-17 1975-08-19 Bell Telephone Labor Inc Monolithic led displays
US3940756A (en) * 1974-08-16 1976-02-24 Monsanto Company Integrated composite semiconductor light-emitting display array having LED's and selectively addressable memory elements

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495585A (en) * 1972-05-04 1974-01-18
JPS4979489A (en) * 1972-12-04 1974-07-31

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63120287U (en) * 1986-12-29 1988-08-03
JP2007189242A (en) * 2000-08-08 2007-07-26 Osram Opto Semiconductors Gmbh Opto-electronics semiconductor chip and its manufacturing method
US7547921B2 (en) 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
US7511311B2 (en) 2002-08-01 2009-03-31 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US8035118B2 (en) 2002-08-01 2011-10-11 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US8330179B2 (en) 2002-08-01 2012-12-11 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US8742438B2 (en) 2002-08-01 2014-06-03 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
JP2008244309A (en) * 2007-03-28 2008-10-09 Fujitsu Ltd Semiconductor light-emitting element and manufacturing method therefor
US9853188B2 (en) 2010-04-12 2017-12-26 Osram Opto Semiconductors Gmbh Light-emitting diode chip with current spreading layer
JP2012044232A (en) * 2011-12-02 2012-03-01 Toshiba Corp Semiconductor light emitting device

Also Published As

Publication number Publication date
DE2716205A1 (en) 1977-11-10
GB1553783A (en) 1979-10-10
DE2716205B2 (en) 1981-03-19
DE2716205C3 (en) 1981-12-17
FR2348541B1 (en) 1982-05-21
CA1074427A (en) 1980-03-25
FR2348541A1 (en) 1977-11-10

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