JPS5361287A - Compound semiconductor light emitting element - Google Patents

Compound semiconductor light emitting element

Info

Publication number
JPS5361287A
JPS5361287A JP13623076A JP13623076A JPS5361287A JP S5361287 A JPS5361287 A JP S5361287A JP 13623076 A JP13623076 A JP 13623076A JP 13623076 A JP13623076 A JP 13623076A JP S5361287 A JPS5361287 A JP S5361287A
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
semiconductor light
compound semiconductor
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13623076A
Other languages
Japanese (ja)
Inventor
Makoto Tashiro
Tatsuro Beppu
Tetsuo Sekiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13623076A priority Critical patent/JPS5361287A/en
Publication of JPS5361287A publication Critical patent/JPS5361287A/en
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To improve light emitting efficiency by making the doner concentration of a substrate as low as 6×1016 to 4×1017/cm3 and defining the concentration of N2 to be formed thereon as high as 6×1017 to 2×1018/cm3.
COPYRIGHT: (C)1978,JPO&Japio
JP13623076A 1976-11-15 1976-11-15 Compound semiconductor light emitting element Pending JPS5361287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13623076A JPS5361287A (en) 1976-11-15 1976-11-15 Compound semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13623076A JPS5361287A (en) 1976-11-15 1976-11-15 Compound semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS5361287A true JPS5361287A (en) 1978-06-01

Family

ID=15170318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13623076A Pending JPS5361287A (en) 1976-11-15 1976-11-15 Compound semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS5361287A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302839A (en) * 1991-07-29 1994-04-12 Shin-Etsu Handotai Co., Ltd. Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302839A (en) * 1991-07-29 1994-04-12 Shin-Etsu Handotai Co., Ltd. Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon

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