JPS5429592A - Light emitting element of chemical compound semiconductor - Google Patents

Light emitting element of chemical compound semiconductor

Info

Publication number
JPS5429592A
JPS5429592A JP9498677A JP9498677A JPS5429592A JP S5429592 A JPS5429592 A JP S5429592A JP 9498677 A JP9498677 A JP 9498677A JP 9498677 A JP9498677 A JP 9498677A JP S5429592 A JPS5429592 A JP S5429592A
Authority
JP
Japan
Prior art keywords
compound semiconductor
chemical compound
light emitting
emitting element
light emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9498677A
Other languages
Japanese (ja)
Other versions
JPS5753992B2 (en
Inventor
Tatsuro Beppu
Masami Iwamoto
Makoto Tashiro
Akinobu Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9498677A priority Critical patent/JPS5429592A/en
Publication of JPS5429592A publication Critical patent/JPS5429592A/en
Publication of JPS5753992B2 publication Critical patent/JPS5753992B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To increase the light emission efficiency, by monotonously decreasing the donor concentration of the n type chemical compound semiconductor layer toward growing direction and forming the impurity being the center of light emission so that it is increased toward growing direction.
COPYRIGHT: (C)1979,JPO&Japio
JP9498677A 1977-08-10 1977-08-10 Light emitting element of chemical compound semiconductor Granted JPS5429592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9498677A JPS5429592A (en) 1977-08-10 1977-08-10 Light emitting element of chemical compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9498677A JPS5429592A (en) 1977-08-10 1977-08-10 Light emitting element of chemical compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5429592A true JPS5429592A (en) 1979-03-05
JPS5753992B2 JPS5753992B2 (en) 1982-11-16

Family

ID=14125209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9498677A Granted JPS5429592A (en) 1977-08-10 1977-08-10 Light emitting element of chemical compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5429592A (en)

Also Published As

Publication number Publication date
JPS5753992B2 (en) 1982-11-16

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