JPS5299792A - Production of semiconductor light emitting device - Google Patents
Production of semiconductor light emitting deviceInfo
- Publication number
- JPS5299792A JPS5299792A JP1581476A JP1581476A JPS5299792A JP S5299792 A JPS5299792 A JP S5299792A JP 1581476 A JP1581476 A JP 1581476A JP 1581476 A JP1581476 A JP 1581476A JP S5299792 A JPS5299792 A JP S5299792A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- production
- emitting device
- semiconductor light
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: A laser device of small operating current and superior directivity is obtained by thickly forming only the edge part of a light emitting region.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1581476A JPS5299792A (en) | 1976-02-18 | 1976-02-18 | Production of semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1581476A JPS5299792A (en) | 1976-02-18 | 1976-02-18 | Production of semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5299792A true JPS5299792A (en) | 1977-08-22 |
JPS54390B2 JPS54390B2 (en) | 1979-01-10 |
Family
ID=11899302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1581476A Granted JPS5299792A (en) | 1976-02-18 | 1976-02-18 | Production of semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5299792A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5333080A (en) * | 1976-09-08 | 1978-03-28 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting semiconductor device and its production |
JPS5386162A (en) * | 1977-01-06 | 1978-07-29 | Nec Corp | Liquid phase crystal growth method |
JPS5496386A (en) * | 1978-01-14 | 1979-07-30 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of buried optical semiconductor device |
JPS54101686A (en) * | 1978-01-13 | 1979-08-10 | Xerox Corp | Hetero junction laser and method of fabricating same |
JPS54107284A (en) * | 1978-02-10 | 1979-08-22 | Nec Corp | Semiconductor junction laser and its production |
JPS564293A (en) * | 1979-06-25 | 1981-01-17 | Agency Of Ind Science & Technol | Manufacture of semiconductor laser device |
JPS5845586U (en) * | 1981-09-24 | 1983-03-26 | 日本電気株式会社 | display device |
-
1976
- 1976-02-18 JP JP1581476A patent/JPS5299792A/en active Granted
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5333080A (en) * | 1976-09-08 | 1978-03-28 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting semiconductor device and its production |
JPS5433960B2 (en) * | 1976-09-08 | 1979-10-24 | ||
JPS5386162A (en) * | 1977-01-06 | 1978-07-29 | Nec Corp | Liquid phase crystal growth method |
JPS6112368B2 (en) * | 1977-01-06 | 1986-04-08 | Nippon Electric Co | |
JPS54101686A (en) * | 1978-01-13 | 1979-08-10 | Xerox Corp | Hetero junction laser and method of fabricating same |
JPS5846075B2 (en) * | 1978-01-13 | 1983-10-14 | ゼロツクス コ−ポレ−シヨン | Heterojunction injection laser |
JPS5496386A (en) * | 1978-01-14 | 1979-07-30 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of buried optical semiconductor device |
JPS54107284A (en) * | 1978-02-10 | 1979-08-22 | Nec Corp | Semiconductor junction laser and its production |
JPS564293A (en) * | 1979-06-25 | 1981-01-17 | Agency Of Ind Science & Technol | Manufacture of semiconductor laser device |
JPS5845586U (en) * | 1981-09-24 | 1983-03-26 | 日本電気株式会社 | display device |
Also Published As
Publication number | Publication date |
---|---|
JPS54390B2 (en) | 1979-01-10 |
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