JPS564293A - Manufacture of semiconductor laser device - Google Patents

Manufacture of semiconductor laser device

Info

Publication number
JPS564293A
JPS564293A JP7914879A JP7914879A JPS564293A JP S564293 A JPS564293 A JP S564293A JP 7914879 A JP7914879 A JP 7914879A JP 7914879 A JP7914879 A JP 7914879A JP S564293 A JPS564293 A JP S564293A
Authority
JP
Japan
Prior art keywords
layer
light
increase
substrate
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7914879A
Other languages
Japanese (ja)
Inventor
Yunosuke Makita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP7914879A priority Critical patent/JPS564293A/en
Publication of JPS564293A publication Critical patent/JPS564293A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To increase the output power of a semiconductor laser device by providing a tapered surface expanding elevationally at right angle with respect to the opening direction at least part of the upper and lower surfaces of a light resonator. CONSTITUTION:Tapered portions of taper angles OMEGA1, OMEGA2, OMEGAm, OMEGAn are formed on an N-type substrate 7. Then, a lower light enclosure layer 3, a light waveguide layer 22, a carrier radiation recombination layer 21, and an upper light waveguide forming layer 23' are gradually grown on the substrate 7. Then, the layer 23' is etched to form an upper light waveguide path layer 23 having taper angles theta3, theta4. Then, a light enclosure layer 4 and PN reverse bias layers 9, 11 are formed on the layer 23. Thereafter, a stripe opening is perforated on the PN inversion layer, and electrodes 8, 10 are mounted on the upper portion of the opening and under the substrate 7. Subsequently, desired cutting plane such as, for example, cutting line O-O is cut. In this manner the reduction of the laser gain at the tapered portion of both end faces does not adversely affect the increase of the threshold current of the laser so as to increase the output power of the laser device and the life of the device.
JP7914879A 1979-06-25 1979-06-25 Manufacture of semiconductor laser device Pending JPS564293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7914879A JPS564293A (en) 1979-06-25 1979-06-25 Manufacture of semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7914879A JPS564293A (en) 1979-06-25 1979-06-25 Manufacture of semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS564293A true JPS564293A (en) 1981-01-17

Family

ID=13681866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7914879A Pending JPS564293A (en) 1979-06-25 1979-06-25 Manufacture of semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS564293A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170586A (en) * 1981-04-13 1982-10-20 Sharp Corp Semiconductor element
JPS60193300U (en) * 1984-05-31 1985-12-23 株式会社　西原環境衛生研究所 Aeration device for septic tank

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device
JPS5333080A (en) * 1976-09-08 1978-03-28 Nippon Telegr & Teleph Corp <Ntt> Light emitting semiconductor device and its production
JPS5335392A (en) * 1976-09-13 1978-04-01 Sharp Corp Mode controlled semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device
JPS5333080A (en) * 1976-09-08 1978-03-28 Nippon Telegr & Teleph Corp <Ntt> Light emitting semiconductor device and its production
JPS5335392A (en) * 1976-09-13 1978-04-01 Sharp Corp Mode controlled semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170586A (en) * 1981-04-13 1982-10-20 Sharp Corp Semiconductor element
JPS60193300U (en) * 1984-05-31 1985-12-23 株式会社　西原環境衛生研究所 Aeration device for septic tank
JPS644478Y2 (en) * 1984-05-31 1989-02-06

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