JPS5669885A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5669885A
JPS5669885A JP14624879A JP14624879A JPS5669885A JP S5669885 A JPS5669885 A JP S5669885A JP 14624879 A JP14624879 A JP 14624879A JP 14624879 A JP14624879 A JP 14624879A JP S5669885 A JPS5669885 A JP S5669885A
Authority
JP
Japan
Prior art keywords
layer
type
refractive indices
currents
light waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14624879A
Other languages
Japanese (ja)
Inventor
Yoichi Unno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14624879A priority Critical patent/JPS5669885A/en
Publication of JPS5669885A publication Critical patent/JPS5669885A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Abstract

PURPOSE:To stabilize an oscillation mode and improve productivity by a method wherein a P layer and an N layer, refractive indices thereof are between those of an active layer and a clad layer, are stacked between the active layer and the clad layer, a light waveguide layer is formed, Zn is diffused in a beltlike shape, and laser rays are confined by the difference of the refractive indices. CONSTITUTION:Hetero structure is formed in such a manner that an N type clad layer 12 by GaAlAs, a P type active layer 13, P and N light waveguide layers 14, 15, a P type clad layer 16 and P type GaAs 17 are stacked on an N type GaAs substrate 11. When Zn is diffused up to the inside of the layer 14 and a beltlike layer 18 is built up, currents selectively flow through the layer 18, a luminous region is formed just under the layer 18 at the center of the active layer 13, and critical currents are also little. Laser rays generated by the difference of refractive indices are propagated in the layer 18 in the waveguide layers 14, 15. Diffusion is easily controlled because a bottom of the layer 18 needs not reach the head of the inside of the layer 14. Since currents are collected to the luminous region and flow uniformly, laser efficiency is improved, oscillation is stably enabled up to value several times as much as an oscillation threshold value by the installation of a light waveguide, and great output is obtained.
JP14624879A 1979-11-12 1979-11-12 Semiconductor laser device Pending JPS5669885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14624879A JPS5669885A (en) 1979-11-12 1979-11-12 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14624879A JPS5669885A (en) 1979-11-12 1979-11-12 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5669885A true JPS5669885A (en) 1981-06-11

Family

ID=15403434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14624879A Pending JPS5669885A (en) 1979-11-12 1979-11-12 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5669885A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0114109A2 (en) * 1983-01-14 1984-07-25 Kabushiki Kaisha Toshiba Semiconductor laser device and method for manufacturing the same
JP2007311184A (en) * 2006-05-18 2007-11-29 Zenoah:Kk Cable terminal and cable using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0114109A2 (en) * 1983-01-14 1984-07-25 Kabushiki Kaisha Toshiba Semiconductor laser device and method for manufacturing the same
JP2007311184A (en) * 2006-05-18 2007-11-29 Zenoah:Kk Cable terminal and cable using the same
US7717722B2 (en) 2006-05-18 2010-05-18 Husqvarna Zenoah Co., Ltd. Cable terminal and cable using the same

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