JPS57157586A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS57157586A JPS57157586A JP4290781A JP4290781A JPS57157586A JP S57157586 A JPS57157586 A JP S57157586A JP 4290781 A JP4290781 A JP 4290781A JP 4290781 A JP4290781 A JP 4290781A JP S57157586 A JPS57157586 A JP S57157586A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- strips
- buried
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain laser light of large power from a semiconductor laser device by providing a pair of mesa strips containing active layers in parallel with each other on a semiconductor substrate and setting the equivalent refractive index of waveguides in the prescribed relationship. CONSTITUTION:A pair of mesa strips 15 formed of clad layers 12, active layers 13 and clad layers 14 are formed in parallel on a GaAs substrate 11. Waveguides of double hetero DH structure in which the layer 13 is interposed between the layers 12 and 14 are formed at the layers 15. A buried layer 19 having waveguide structure of DH structure formed of a p type later 16, an i type layer 17 and an n type layer 18 is buried in the region between the strips 15. On the other hand, a buried layer 20 formed of the layers 16-18 is buried outside the strips 15. In this structure, the equivalent refractive index of the least order mode of the waveguide is set to the relationship of n2>n1>n3, where n1 represents the strips, n2 represents the layer 19 an n3 represents the layer 20. In this manner, extremely stable lateral minimum order mode oscillation can be obtained in a direction parallel to the main surface of a crystal, and large power can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4290781A JPS57157586A (en) | 1981-03-24 | 1981-03-24 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4290781A JPS57157586A (en) | 1981-03-24 | 1981-03-24 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57157586A true JPS57157586A (en) | 1982-09-29 |
Family
ID=12649097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4290781A Pending JPS57157586A (en) | 1981-03-24 | 1981-03-24 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57157586A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014484A (en) * | 1983-07-04 | 1985-01-25 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| JPS60198796A (en) * | 1983-12-01 | 1985-10-08 | テイア−ルダブリユ− インコ−ポレ−テツド | Semiconductor laser having stopping layer |
-
1981
- 1981-03-24 JP JP4290781A patent/JPS57157586A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| APPLIED PHYSICS LETTERS=1980 * |
| XEROX DISCLOSURE JOURNAL=1979 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014484A (en) * | 1983-07-04 | 1985-01-25 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| JPS60198796A (en) * | 1983-12-01 | 1985-10-08 | テイア−ルダブリユ− インコ−ポレ−テツド | Semiconductor laser having stopping layer |
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