JPS57152180A - Manufacture of semiconductor laser device - Google Patents

Manufacture of semiconductor laser device

Info

Publication number
JPS57152180A
JPS57152180A JP3756981A JP3756981A JPS57152180A JP S57152180 A JPS57152180 A JP S57152180A JP 3756981 A JP3756981 A JP 3756981A JP 3756981 A JP3756981 A JP 3756981A JP S57152180 A JPS57152180 A JP S57152180A
Authority
JP
Japan
Prior art keywords
layer
light guiding
type
laser device
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3756981A
Other languages
Japanese (ja)
Other versions
JPS6342871B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3756981A priority Critical patent/JPS57152180A/en
Publication of JPS57152180A publication Critical patent/JPS57152180A/en
Publication of JPS6342871B2 publication Critical patent/JPS6342871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Abstract

PURPOSE:To manufacture with ease a semiconductor laser device with excellent temperature properties by a method wherein a clad layer, active layer, light guiding layer, and clad layer are successively grown on a semiconductor substrate and then the lamination is etched into a ridge shaped light guiding layer. CONSTITUTION:Grown successively on an N type InP semiconductor substrate 10 are an N type InP clad layer 11, InGaAsP active layer 12, P type InGaAsP light guiding layer 13, and P type InP clad layer 14 by the liquid phase epitaxial method. An SiO2 film 20 is added which, next, serves as a mask in etching the semiconductor layers into a ridge. The etching depth is to be controlled so that the light guiding layer is 0.2-0.3mum thick. Then, by the liquid phase epitaxial method, a P type InP layer 15 is grown on both sides of the ridge. Lastly, an N type InGaAsP electrode layer 16 is formed and covers the entire surface, resulting in the completion of a Buried Rib Waveguide (BRW) type semiconductor laser device.
JP3756981A 1981-03-16 1981-03-16 Manufacture of semiconductor laser device Granted JPS57152180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3756981A JPS57152180A (en) 1981-03-16 1981-03-16 Manufacture of semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3756981A JPS57152180A (en) 1981-03-16 1981-03-16 Manufacture of semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS57152180A true JPS57152180A (en) 1982-09-20
JPS6342871B2 JPS6342871B2 (en) 1988-08-25

Family

ID=12501152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3756981A Granted JPS57152180A (en) 1981-03-16 1981-03-16 Manufacture of semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57152180A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60258987A (en) * 1984-06-06 1985-12-20 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
JPS6254987A (en) * 1985-09-04 1987-03-10 Hitachi Ltd Semiconductor laser
JPH02394A (en) * 1987-12-28 1990-01-05 Canon Inc Semiconductor laser
JPH08307010A (en) * 1996-04-22 1996-11-22 Hitachi Ltd Semiconductor laser

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60258987A (en) * 1984-06-06 1985-12-20 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
JPS6254987A (en) * 1985-09-04 1987-03-10 Hitachi Ltd Semiconductor laser
JPH02394A (en) * 1987-12-28 1990-01-05 Canon Inc Semiconductor laser
JPH08307010A (en) * 1996-04-22 1996-11-22 Hitachi Ltd Semiconductor laser

Also Published As

Publication number Publication date
JPS6342871B2 (en) 1988-08-25

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