JPS5728390A - Semiconductor laser - Google Patents

Abstract

PURPOSE:To flat an active layer formed on a clad layer to which a convex section is shaped toward a substrate by a method wherein the first and second semiconductor layers with different compositions are each laminated and formed burying a groove section corresponding to the convex section, and a bottom surface of a groove section is limited, in the semiconductor laser with the clad layer. CONSTITUTION:When an N type InP buffer layer 12 is grown on the N type InP substrate 11 in an epitaxial shape in a liquid phase, and a P type InGaAsP current stopping layer 20 is formed on the layer 12, and N type InGaAsP etching stopping layer 21 is put newly between the layers. In this case, the compositions of the layers 20, 21 are made differ, and eatching rates are made differ previously. The layer 20 is coated with an N type or P type InGaAsP optical waveguide layer 19, the layer 19 and further the layer 20 are etched, and the groove, the bottom surface thereof stops on the surface of the layer 21, is shaped accordng to the difference of the rates. When an N type InP clad layer 13 with a convex section 13a burying the groove is formed, the surface is flatted. Consequently, an N type or P type InGaAsP active layer 14 shaped on the layer 13 is also levelled.