JPS56108261A - Optical integrated circuit - Google Patents

Optical integrated circuit

Info

Publication number
JPS56108261A
JPS56108261A JP1124780A JP1124780A JPS56108261A JP S56108261 A JPS56108261 A JP S56108261A JP 1124780 A JP1124780 A JP 1124780A JP 1124780 A JP1124780 A JP 1124780A JP S56108261 A JPS56108261 A JP S56108261A
Authority
JP
Japan
Prior art keywords
optical waveguide
electrode
substrate
type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1124780A
Other languages
Japanese (ja)
Inventor
Mitsukazu Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1124780A priority Critical patent/JPS56108261A/en
Publication of JPS56108261A publication Critical patent/JPS56108261A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31—Digital deflection, i.e. optical switching
    • G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
    • G02F1/3133—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type the optical waveguides being made of semiconducting materials

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make an optical waveguide path emit outgoing rays by forming in the Si thin film provided on an Si substrate a plurality of optical waveguide paths each formed by a region heaving lower free carrier density than the neighborhood, providing an electrode on one of the optical waveguide paths and controlling the voltage applied to the electrode. CONSTITUTION:On an N type Si substrate 1 having a free carrier density of approximately 7X10<17>/cm<3>, an N type Si thin layer 2 having the approximately same density as the substrate 1 is formed, and in the layer 2, track-shaped N<-> type optical waveguide paths 3 and 4 each having a free carrier density of approximately 10<16>/cm<3> are formed. In this case, the optical waveguide paths 3 and 4 are made parallel to each other at a minute interval at the end portion of the layer 2 so as to form a directional coupler structure, and thereafter only the optical waveguide path 4 is headed toward another end portion. Then, a strip-shaped electrode 6 is provided on the parallel portion of the optical waveguide path 3 through a P type Si layer 5, and the lower surface of the substrate 1 is all coated with an electrode 7. Thereby, according to the existence of the voltage application to the electrode 6, incident rays 8 are made to go out from the end of the optical waveguide path 4 or 3 as outgoing rays 10 or 9 respectively.
JP1124780A 1980-02-01 1980-02-01 Optical integrated circuit Pending JPS56108261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1124780A JPS56108261A (en) 1980-02-01 1980-02-01 Optical integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1124780A JPS56108261A (en) 1980-02-01 1980-02-01 Optical integrated circuit

Publications (1)

Publication Number Publication Date
JPS56108261A true JPS56108261A (en) 1981-08-27

Family

ID=11772604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1124780A Pending JPS56108261A (en) 1980-02-01 1980-02-01 Optical integrated circuit

Country Status (1)

Country Link
JP (1) JPS56108261A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194388A (en) * 1984-10-16 1986-05-13 Matsushita Electric Ind Co Ltd Semiconductor laser element
JPS63165867U (en) * 1987-04-17 1988-10-28

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537349A (en) * 1976-07-09 1978-01-23 Mitsubishi Electric Corp Semiconductor device
JPS53104256A (en) * 1977-02-23 1978-09-11 Fujitsu Ltd Production of light modulator
JPS5476248A (en) * 1977-11-30 1979-06-18 Nippon Telegr & Teleph Corp <Ntt> Light control circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537349A (en) * 1976-07-09 1978-01-23 Mitsubishi Electric Corp Semiconductor device
JPS53104256A (en) * 1977-02-23 1978-09-11 Fujitsu Ltd Production of light modulator
JPS5476248A (en) * 1977-11-30 1979-06-18 Nippon Telegr & Teleph Corp <Ntt> Light control circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194388A (en) * 1984-10-16 1986-05-13 Matsushita Electric Ind Co Ltd Semiconductor laser element
JPS63165867U (en) * 1987-04-17 1988-10-28

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