JPH01140133A - Optical switch device - Google Patents
Optical switch deviceInfo
- Publication number
- JPH01140133A JPH01140133A JP29756387A JP29756387A JPH01140133A JP H01140133 A JPH01140133 A JP H01140133A JP 29756387 A JP29756387 A JP 29756387A JP 29756387 A JP29756387 A JP 29756387A JP H01140133 A JPH01140133 A JP H01140133A
- Authority
- JP
- Japan
- Prior art keywords
- optical switch
- layer
- branch
- waveguide
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- 241001655798 Taku Species 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3137—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光通信、光情報処理分野で用いられる光スイッ
チに係り、特に漏洩量の少ない先導波路の分岐部に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical switch used in the fields of optical communication and optical information processing, and particularly relates to a branching portion of a leading waveguide with a small amount of leakage.
従来の光スイッチ装置はエレクトロニクス・レターズ、
第２０巻、Ｎｎ６°（１９８４年）第２２８〜第２２９
頁（Ｒｌｅｃｔｒｏｎｉｃｓ Ｌｅｔｔｅｒｓ １９８
４ 。Conventional optical switch devices are electronics letters,
Volume 20, Nn6° (1984) No. 228-229
Page (Relectronics Letters 198
4.
ｖｏ Ｑ ｖ ２０ ＊ Ｈａ ６ ＊ ｐ ｐ ２２
８〜２２９ ）において述べられているように、光の分
岐部の分岐した導波路幅は分岐部および、その先でも同
一の幅で構成されており１分岐部での光の漏洩に対して
特に対策がなされていなかった。vo Q v 20 * Ha 6 * p p 22
8-229), the branched waveguide width of the optical branch is the same at the branch and beyond, and is particularly effective against light leakage at one branch. No measures had been taken.
本発明は上記の光の漏洩に対して対策を施した光スイッ
チ装置に関するものである。なお、この種の装置として
関連するものには電子情報学会（昭和６２年）９６７が
挙げられる。The present invention relates to an optical switch device that takes measures against the above-mentioned light leakage. Incidentally, a related device of this type is 967 published by the Institute of Electronics and Information Engineers (1986).
上記従来技術はホトリソグラフィ、エツチング等のプロ
セスにより、分岐部に鈍りが生じ、これが原因で光スイ
ッチに電圧を印加しない状態のとき、光が所定の導波路
以外の導波路に洩れる問題が生じた。In the above-mentioned conventional technology, processes such as photolithography and etching cause blunting of the branch portions, which causes the problem that light leaks into waveguides other than the designated waveguide when no voltage is applied to the optical switch. .
本発明は上記従来技術の問題点を解決することを目的と
してなされたものである。The present invention has been made for the purpose of solving the above-mentioned problems of the prior art.
上記目的はプロセスによる分岐部の鈍りを考慮して、予
めホトマスクにえぐりを入れ実際の光スイッチのウェハ
ーに転写することによって達成される。The above objective is achieved by hollowing out a photomask in advance and transferring it to a wafer of an actual optical switch, taking into account the blunting of the branch portion due to the process.
即ち、本発明の光スイッチは、分岐された導波路の各々
の内側の稜線が、幅が一定になるように分岐部に向けて
延長した稜線よりも、実際の稜線が導波路内に位置する
ような分岐部を有することを特徴とする。That is, in the optical switch of the present invention, the actual ridgeline is located within the waveguide rather than the ridgeline extended toward the branch so that the inner ridgeline of each branched waveguide has a constant width. It is characterized by having such a branch part.
導波路の分岐部に相当するホトマスクに予めえぐりを入
れたものを用い光スイッチのウェハーを作製することに
より、分岐部に鈍りがなくなる。By fabricating a wafer for an optical switch using a photomask in which holes have been made in advance corresponding to the branch portions of the waveguide, the branch portions are not dull.
それによって導波路に光を入射したとき、所定の導波路
以外の導波路に光が漏れる現象が抑制でき、漏洩量の少
ない光スイッチを実現できる。As a result, when light is incident on the waveguide, it is possible to suppress the phenomenon that the light leaks to waveguides other than the predetermined waveguide, and it is possible to realize an optical switch with a small amount of leakage.
以下１本発明の一実施例を、Ｙ分岐光スイッチに実施し
た例として説明する。An embodiment of the present invention will be described below as an example implemented in a Y-branch optical switch.
第１図のように基板１としてキャリア濃度がＩＸ １０
”ｃａ＋″″８のｎ形ＩｎＰを用いて、ＬＰＥ法でＩ
ｎＧａＡｓＰ層２を成長させる。つぎにクラッド層とし
てＩ ｎ Ｐ 層３を成長させ、その上にキャップ層と
してＩｎＧａＡｓＰ層４を成長させる。As shown in FIG. 1, the carrier concentration is IX 10 as the substrate 1.
Using n-type InP with "ca+""8, I
Grow nGaAsP layer 2. Next, an InP layer 3 is grown as a cladding layer, and an InGaAsP layer 4 is grown thereon as a cap layer.
次いで第２図６の形になるように選択拡散技術によりＺ
ｎを拡散させ、この部分をｐ形にする。Next, the Z
Diffuse n to make this part p-type.
続いて予めホトマスクに第２図の平面図に示すようなえ
ぐりを設けたマスク形状のものを用い、キャップ層３．
光導波層２をＣＱｘガスにてＲＩＢＩ’：装置によりエ
ツチングを行ない第２図１２に示すような形状とする。Next, using a photomask in the shape of a mask with a cutout as shown in the plan view of FIG. 2, a cap layer 3.
The optical waveguide layer 2 is etched using a RIBI' apparatus using CQx gas to form a shape as shown in FIG. 12.
その後リフオオフ技術を用いて、Ａｕ−Ｚｎ電極７を形
成する。最後に裏面にＡｕ−Ｇｅ Ｎｘを蒸着して、
ｎ電極１１を形成して光スイッチ装置を完成した。Thereafter, the Au-Zn electrode 7 is formed using a reoff-off technique. Finally, Au-Ge Nx is deposited on the back side,
The n-electrode 11 was formed to complete the optical switch device.
従来技術ではホトマスクに上記のえぐりが形成されてい
ないために、ホトリソグラフィ、エツチング等のプロセ
スにより１分岐部に形状の鈍りが生じ、第４図１４のよ
うな分岐部形状になってしまう。In the conventional technique, since the above-mentioned gouge is not formed in the photomask, the shape of one branch portion becomes dull due to processes such as photolithography and etching, resulting in the shape of the branch portion as shown in FIG. 4.
この本発明のスイッチと第４図に示す従来技術によるス
イッチについて、スイッチング特性の比較測定した結果
について述べる０本発明のスイッチの入射口８に波長１
．３μｍのシングルモード光を入射したとき、電圧を印
加しない場合には出射口９からの出力Ｐ１と出射口１０
からの出力ｐｇの比は１２０／１であった。第４図の従
来技術のスイッチでは上記の比が１０７１であった。こ
の値の逆数すなわちＰａ／Ｐｚは光の漏洩量を表わして
いる。The results of comparing and measuring the switching characteristics of the switch of the present invention and the switch of the prior art shown in FIG. 4 will be described below.
．． When a single mode light of 3 μm is input, if no voltage is applied, the output P1 from the output aperture 9 and the output P1 from the output aperture 10
The ratio of output pg from was 120/1. In the prior art switch of FIG. 4, this ratio was 1071. The reciprocal of this value, ie, Pa/Pz, represents the amount of light leakage.
つぎに３ｖを印加（電流２０ｍＡ）Ｌ、た場合のＰ１／
Ｐｚは本発明および従来技術のスイッチとも１／３０で
あった。Next, when 3V is applied (current 20mA) L, P1/
Pz was 1/30 for both the switch of the present invention and the switch of the prior art.
本実施例によれば、従来導波路の分岐部がホトリソグラ
フィ、エツチング等のプロセスにより、第４図１４の様
に鈍り、これが原因で光の漏洩量に問題があったが、予
め分岐部に第２図１２の様にえぐり部をホトマスク上に
設けてパターニングすれば、この問題の解決が図れ、漏
洩量が飛躍的に減少できる。According to this embodiment, the branching part of the conventional waveguide was dulled by processes such as photolithography and etching, as shown in FIG. This problem can be solved and the amount of leakage can be dramatically reduced by providing a gouged part on the photomask and patterning it as shown in FIG. 2, 12.
本素子の寸法は１＋＊ｍＸ０．５ｍｍで、Ｙ型導波路の
分岐角は６°、導波路の幅は５μｍである。The dimensions of this device are 1+*m×0.5 mm, the branching angle of the Y-shaped waveguide is 6°, and the width of the waveguide is 5 μm.
以上はＹ分岐型光スイッチの実施例について述べたが、
Ｘ分岐型光スイッチについても同様に可ｊ能である。つ
ぎにＸ分岐型光、スイッチについての本発明の実施例に
ついて述べる。作製手順は上記Ｙ分岐型光スイッチと同
じで、ホトマスクのパターンが異なるのみである０本発
明のＸ分岐型光スイッチを第５図に示す、第６図に従来
型のＸ分岐型光スイッチを示す、第７図は従来型１本発
明に共通な光スイッチの断面図である。The above is an example of a Y-branch type optical switch, but
The same is possible with an X-branch type optical switch. Next, an embodiment of the present invention regarding an X-branch type optical switch will be described. The fabrication procedure is the same as the Y-branch optical switch described above, with the only difference being the photomask pattern. The X-branch optical switch of the present invention is shown in FIG. 5, and the conventional X-branch optical switch is shown in FIG. FIG. 7 is a sectional view of a conventional optical switch common to the present invention.
これら光スイッチのスイッチング特性について測定を行
なった結果、本発明のＸ分岐型光スイッチは従来のＸ分
岐光スイッチよりも光の漏洩量が一桁少ないことが確認
された。As a result of measuring the switching characteristics of these optical switches, it was confirmed that the X-branch type optical switch of the present invention has an amount of light leakage that is one order of magnitude smaller than that of the conventional X-branch optical switch.
本実施例は光導波路としてＩｎＧａＡｓＰの例について
説明したが、他の半導体材料も可能である。Although this embodiment has been described using InGaAsP as an example of the optical waveguide, other semiconductor materials are also possible.
本発明によれば、導波路の分岐部のえぐりを設けること
により、所定の導波路以外への光の漏洩量を減少させる
ことができる。従って、優れた光スイッチが提供できる
ので、光伝送・通信システムの構築を容易にし市場の拡
大を図る効果がある。According to the present invention, by providing a gouge in the branch portion of the waveguide, it is possible to reduce the amount of light leaking to areas other than the predetermined waveguide. Therefore, an excellent optical switch can be provided, which has the effect of facilitating the construction of optical transmission/communication systems and expanding the market.
第１図は従来技術と本発明に共通な光スイッチのウェハ
ー断面図、第２図は本発明の実施例の光スイッチの上面
図、第３図は従来技術と本発明に共通な光スイッチの断
面図、第４図は従来技術の光スイッチの上面図、第５図
は本発明の実施例の光スイッチの上面図、第６図は従来
技術の光スイッチの上面図、第７図は従来技術と本発明
に共通な光スイッチの断面図である。
１・・・ＩｎＰ基板、２・・・ＩｎＧａＡｓＰ光導波層
、３・・・ＩｎＰクラッド層、４ ＝４ｎＧａＡｓｐキ
ャップ層、５・・・光導波路、６・・・Ｐ形波散層、７
・・・Ｐ側電極、８・・・入射口Ｉ、９・・・出射口■
、１０・・・出射口■。
１１・・・ｎ側電極、１２・・・本発明の分岐部、１３
・・・仮想的な分岐部、１４・・・従来技術の分岐部、
１５・・・入射口■。
拓 ／ｌ！１
鳩 ２ ｎ
率 ３ （！］
￥４ 図
鷺 ５ 囚
第 ６１！］
７５ 人財口工FIG. 1 is a wafer cross-sectional view of an optical switch common to the prior art and the present invention, FIG. 2 is a top view of an optical switch according to an embodiment of the present invention, and FIG. 3 is a wafer cross-sectional view of an optical switch common to the prior art and the present invention. 4 is a top view of a conventional optical switch, FIG. 5 is a top view of an optical switch according to an embodiment of the present invention, FIG. 6 is a top view of a conventional optical switch, and FIG. 7 is a conventional optical switch. 1 is a cross-sectional view of an optical switch common to the technology and the present invention; FIG. DESCRIPTION OF SYMBOLS 1... InP substrate, 2... InGaAsP optical waveguide layer, 3... InP cladding layer, 4 =4nGaAsp cap layer, 5... optical waveguide, 6... P-type wave dispersion layer, 7
... P side electrode, 8... Inlet port I, 9... Output port ■
, 10... Output port ■. 11... N-side electrode, 12... Branch portion of the present invention, 13
...virtual branch, 14... prior art branch,
15...Incidence port ■. Taku /l! 1 pigeon 2 n rate 3 (!] ¥4 figure heron 5 prisoner number 61!] 75 human resources mouthpiece
Claims (1)
側の稜線が導波路の幅が一定になるよう分岐部に向けて
延長した稜線よりも実際の稜線が導波路内に位置するよ
うな分岐部を有することを特徴とした光スイッチ装置。1. In an optical switch, the inner ridgeline of each branched waveguide is such that the actual ridgeline is located within the waveguide rather than the ridgeline extended toward the branch so that the width of the waveguide is constant. An optical switch device characterized by having a branch section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29756387A JPH01140133A (en) | 1987-11-27 | 1987-11-27 | Optical switch device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29756387A JPH01140133A (en) | 1987-11-27 | 1987-11-27 | Optical switch device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01140133A true JPH01140133A (en) | 1989-06-01 |
Family
ID=17848164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29756387A Pending JPH01140133A (en) | 1987-11-27 | 1987-11-27 | Optical switch device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01140133A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0367682A2 (en) * | 1988-11-04 | 1990-05-09 | The Furukawa Electric Co., Ltd. | Optical switch |
| JP2020194188A (en) * | 2020-08-13 | 2020-12-03 | 日本電信電話株式会社 | Broadband branch optical circuit |
-
1987
- 1987-11-27 JP JP29756387A patent/JPH01140133A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0367682A2 (en) * | 1988-11-04 | 1990-05-09 | The Furukawa Electric Co., Ltd. | Optical switch |
| JP2020194188A (en) * | 2020-08-13 | 2020-12-03 | 日本電信電話株式会社 | Broadband branch optical circuit |
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