JPS56108260A - Optical integrated circuit - Google Patents

Optical integrated circuit

Info

Publication number
JPS56108260A
JPS56108260A JP1124680A JP1124680A JPS56108260A JP S56108260 A JPS56108260 A JP S56108260A JP 1124680 A JP1124680 A JP 1124680A JP 1124680 A JP1124680 A JP 1124680A JP S56108260 A JPS56108260 A JP S56108260A
Authority
JP
Japan
Prior art keywords
electrode
optical waveguide
strip
paths
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1124680A
Other languages
Japanese (ja)
Inventor
Mitsukazu Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1124680A priority Critical patent/JPS56108260A/en
Publication of JPS56108260A publication Critical patent/JPS56108260A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31—Digital deflection, i.e. optical switching
    • G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
    • G02F1/3133—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type the optical waveguides being made of semiconducting materials

Abstract

PURPOSE:To obtain an optical integrated circuit with high quality by forming two optical waveguide paths in a semiconductor layer at a minute intervals, providing a strip-shaped control electrode on the semiconductor layer between the paths and switching over incident rays to one optical waveguide path according to the intensity of the voltage applied to said electrode. CONSTITUTION:On an N type Si substrate 1, an N<-> type thin layer 2 is formed, and in its center two optical waveguide paths 4 and 5 are bored in parallel to each other at a minute interval. Then, an N type impurity with high concentration is diffused into the layer 2 exposed between these optical waveguide paths 4 and 5 order to form a N<+> type region 9, on which a strip-shaped electrode 7 is attached through a strip-shaped SiO2 film 6. The whole lower surface of the substrate 1 is coated with an electrode 8. Thereby, an MOS structure is formed by the region 9, the film 6 and the electrode 7, and by varying the depth of the depletion layer formed in the region 9, i.e., the degree of coupling, according to the intensity of the voltage applied to the electrode 7, incident rays are switched over between the optical waveguide paths 4 and 5.
JP1124680A 1980-02-01 1980-02-01 Optical integrated circuit Pending JPS56108260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1124680A JPS56108260A (en) 1980-02-01 1980-02-01 Optical integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1124680A JPS56108260A (en) 1980-02-01 1980-02-01 Optical integrated circuit

Publications (1)

Publication Number Publication Date
JPS56108260A true JPS56108260A (en) 1981-08-27

Family

ID=11772577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1124680A Pending JPS56108260A (en) 1980-02-01 1980-02-01 Optical integrated circuit

Country Status (1)

Country Link
JP (1) JPS56108260A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177259A (en) * 1974-08-08 1976-07-05 Int Standard Electric Corp
JPS5476248A (en) * 1977-11-30 1979-06-18 Nippon Telegr & Teleph Corp <Ntt> Light control circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177259A (en) * 1974-08-08 1976-07-05 Int Standard Electric Corp
JPS5476248A (en) * 1977-11-30 1979-06-18 Nippon Telegr & Teleph Corp <Ntt> Light control circuit

Similar Documents

Publication Publication Date Title
JPS55120182A (en) Photoelectric converter
GB1463159A (en) Integrated optical device associating a waveguide and a photo detector and a method for manufacturing such a device
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS5712571A (en) Semiconductor photodetector
JPS56108260A (en) Optical integrated circuit
JPS57155784A (en) Photodiode
JPS57197848A (en) Semiconductor device and manufacture thereof
JPS56108261A (en) Optical integrated circuit
JPS55146967A (en) Semiconductor ic device
JPS54109386A (en) Manufacture for silicon symmetrical switch
JPS5775469A (en) Light receiving device
JPS57183076A (en) Field control type optical semiconductor device
JPS5448569A (en) Photo switch
JPS644083A (en) Photovoltaic device
JPS57164580A (en) Photodetecting element having insulating film semiconductor type structure and manufacture thereof
JPS55140275A (en) Semiconductor photodetector
JPS5513953A (en) Complementary integrated circuit
JPS55124277A (en) Semiconductor photodetector
JPS575376A (en) Semiconductor photoreceiving element
JPS54102876A (en) Manufacture for planer type semiconductor device
JPS5610944A (en) Division of semiconductor device
JPS5595369A (en) Semiconductor device
JPS5669879A (en) Semiconductor luminous device with lens
JPS57159080A (en) Semiconductor laser element
JPS5582460A (en) Negative resistance semiconductor element