JPS55124277A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS55124277A
JPS55124277A JP3196879A JP3196879A JPS55124277A JP S55124277 A JPS55124277 A JP S55124277A JP 3196879 A JP3196879 A JP 3196879A JP 3196879 A JP3196879 A JP 3196879A JP S55124277 A JPS55124277 A JP S55124277A
Authority
JP
Japan
Prior art keywords
region
layer
type
sio212
operates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3196879A
Other languages
Japanese (ja)
Inventor
Shigenari Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3196879A priority Critical patent/JPS55124277A/en
Publication of JPS55124277A publication Critical patent/JPS55124277A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To form photodetecting sensitivity of a semiconductor photodetector in high gradient by forming a light shielding layer on the surface region except other conducting region formed on the surface region of one conducting type. CONSTITUTION:SiO212 is diffused in a semiconductor substrate 16 having an n<->-type region 11 in selective diffusion to form a p<+>-type region 13, an insulating film layer (such as, for example, polyimide) 14 is formed on the SiO212 excluding the region 13, and a metal layer (such as, for example, aluminum) 15 is formed to shield light on the film 14. The layer 15 operates also as an anode. The layer 14 operates to reduce the MOS capacity formed with the layer 15 and the region 11.
JP3196879A 1979-03-19 1979-03-19 Semiconductor photodetector Pending JPS55124277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3196879A JPS55124277A (en) 1979-03-19 1979-03-19 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3196879A JPS55124277A (en) 1979-03-19 1979-03-19 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS55124277A true JPS55124277A (en) 1980-09-25

Family

ID=12345744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3196879A Pending JPS55124277A (en) 1979-03-19 1979-03-19 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS55124277A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174680A (en) * 1985-01-30 1986-08-06 Hitachi Ltd Semiconductor photodetector
US5329149A (en) * 1990-10-12 1994-07-12 Seiko Instruments Inc. Image sensor with non-light-transmissive layer having photosensing windows

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110075A (en) * 1975-06-06 1976-01-27 Chokichi Iizuka Dojokairyozai oyobi sonoseizohoho
JPS5165660A (en) * 1974-12-03 1976-06-07 Fujitsu Ltd

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165660A (en) * 1974-12-03 1976-06-07 Fujitsu Ltd
JPS5110075A (en) * 1975-06-06 1976-01-27 Chokichi Iizuka Dojokairyozai oyobi sonoseizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174680A (en) * 1985-01-30 1986-08-06 Hitachi Ltd Semiconductor photodetector
US5329149A (en) * 1990-10-12 1994-07-12 Seiko Instruments Inc. Image sensor with non-light-transmissive layer having photosensing windows

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