JPS5658284A - Detector for light employing semiconductor - Google Patents

Detector for light employing semiconductor

Info

Publication number
JPS5658284A
JPS5658284A JP13407579A JP13407579A JPS5658284A JP S5658284 A JPS5658284 A JP S5658284A JP 13407579 A JP13407579 A JP 13407579A JP 13407579 A JP13407579 A JP 13407579A JP S5658284 A JPS5658284 A JP S5658284A
Authority
JP
Japan
Prior art keywords
substrate
gold
sensors
diffusion
carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13407579A
Other languages
Japanese (ja)
Inventor
Tsuneo Hashizume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13407579A priority Critical patent/JPS5658284A/en
Publication of JPS5658284A publication Critical patent/JPS5658284A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1446Devices controlled by radiation in a repetitive configuration

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To shorten the diffusion distances of carriers and improve spatial resolving power by a method wherein gold is selectively diffused into a semiconductor substrate. CONSTITUTION:A plurality of P type photosensors 13-15 are formed in such a manner that conductive P type diffusion regions 13-15 opposite to a semiconductor substrate 11 are made up into the substrate 11 containing N type impurities through an oxide film 12. Gold diffusion regions 16, 17 are built up by selectively diffusing gold into the substrate 11 between the sensors 13 and 14 and the sensors 14 and 15. Consequently, when an incident light is irradiated onto one photosensor, carriers are generated in the substrate 11, migrate in the substrate 11 by thermal diffusion, but recombine by the regions 16, 17, and do not reach to separated sensors. Thus, the spatial resolving power of a device is improved because the generation of signal currents due to the carriers collected to the sensors is decreased when the structure with the gold diffusion regions is compared to the conventional structure withno gold diffusion region.
JP13407579A 1979-10-16 1979-10-16 Detector for light employing semiconductor Pending JPS5658284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13407579A JPS5658284A (en) 1979-10-16 1979-10-16 Detector for light employing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13407579A JPS5658284A (en) 1979-10-16 1979-10-16 Detector for light employing semiconductor

Publications (1)

Publication Number Publication Date
JPS5658284A true JPS5658284A (en) 1981-05-21

Family

ID=15119799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13407579A Pending JPS5658284A (en) 1979-10-16 1979-10-16 Detector for light employing semiconductor

Country Status (1)

Country Link
JP (1) JPS5658284A (en)

Similar Documents

Publication Publication Date Title
JPS55108780A (en) Thin film solar cell
JPS54116820A (en) Photo detector
US4649409A (en) Photoelectric transducer element
FR2592740A1 (en) HETEROJUNCTION HGCDTE PHOTOVOLTAIC DETECTOR AND MANUFACTURING METHOD THEREOF
JPS5718372A (en) Semiconductor photoreceiving element
JPS5312288A (en) Light emitting semiconductor device
JPS57159073A (en) Semiconductor position detector
JPS57181176A (en) High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor
JPS5658284A (en) Detector for light employing semiconductor
JPS561318A (en) Photoelectric conversion device
JPS5681982A (en) Power phototransistor
JPS5687380A (en) Semiconductor device for detection of radiant light
JPS52124889A (en) Semiconductor photoelectric transducer
JPS57155784A (en) Photodiode
JPH01216581A (en) Semiconductor device
JPS5522871A (en) Semiconductor light detector
JPS5766666A (en) Solid state image pickup device
JPS5718373A (en) Semiconductor photoreceiving element
JPS6255960A (en) Solid state image pick-up device
JPS5455189A (en) Photo transistor
JPS52124888A (en) Production of solar battery
JPH02272765A (en) Array type infrared ray detector
JPS55145380A (en) Semiconductor photo coupler device
JPS57193073A (en) Semiconductor radioactive ray detector
SE8103798L (en) SPECTRAL ANALYSIS PHOTODIOD