JPS5718372A - Semiconductor photoreceiving element - Google Patents

Semiconductor photoreceiving element

Info

Publication number
JPS5718372A
JPS5718372A JP9302480A JP9302480A JPS5718372A JP S5718372 A JPS5718372 A JP S5718372A JP 9302480 A JP9302480 A JP 9302480A JP 9302480 A JP9302480 A JP 9302480A JP S5718372 A JPS5718372 A JP S5718372A
Authority
JP
Japan
Prior art keywords
layer
inp
magnification
impurity
photoreceiving part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9302480A
Other languages
Japanese (ja)
Inventor
Fukunobu Aisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9302480A priority Critical patent/JPS5718372A/en
Publication of JPS5718372A publication Critical patent/JPS5718372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain an APD having excellent characteristics, e.g., high magnification factor, low dark current, etc. with high sensitivity for light of 1.2-1.65mum of wavelength by forming specific buffer layer, light absorption layer, intermediate layer, magnification layer and photoreceiving part, etc. on a substrate. CONSTITUTION:The same conductive type impurity-containing InP (buffer layer) 21, an InGaAs light absorption layer 31, and an InP intermediate layer 41 are formed on an InP substrate 2 containing N type or P type impurity. Different conductive impurity-containing InP magnification layer 41 is formed thereon, and the same conductive impurity high density photoreceiving part 61 as the layer 41 are formed on a partial region, and the thickness of a high density doped layer 42 is so selected as to expand a depletion layer on the entire layer 41 under the photoreceiving part 61 at the reverse bias voltage lower than a breakdown voltage.
JP9302480A 1980-07-08 1980-07-08 Semiconductor photoreceiving element Pending JPS5718372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9302480A JPS5718372A (en) 1980-07-08 1980-07-08 Semiconductor photoreceiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9302480A JPS5718372A (en) 1980-07-08 1980-07-08 Semiconductor photoreceiving element

Publications (1)

Publication Number Publication Date
JPS5718372A true JPS5718372A (en) 1982-01-30

Family

ID=14070910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9302480A Pending JPS5718372A (en) 1980-07-08 1980-07-08 Semiconductor photoreceiving element

Country Status (1)

Country Link
JP (1) JPS5718372A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01126818A (en) * 1987-11-12 1989-05-18 Seiko Electronic Components Ltd Thin profile crystal resonator
JPH01126008A (en) * 1987-11-11 1989-05-18 Seiko Electronic Components Ltd Thin profile crystal vibrator
JPH0423326U (en) * 1990-06-18 1992-02-26
JPH0450919U (en) * 1990-08-31 1992-04-28
JPH0459622U (en) * 1990-09-28 1992-05-21
JPH0459623U (en) * 1990-09-28 1992-05-21
JPH0485821U (en) * 1990-11-28 1992-07-27
JPH0485819U (en) * 1990-11-28 1992-07-27
JPH0485820U (en) * 1990-11-28 1992-07-27
JPH0485916U (en) * 1990-11-29 1992-07-27
JP2021034644A (en) * 2019-08-28 2021-03-01 住友電気工業株式会社 Light receiving element

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01126008A (en) * 1987-11-11 1989-05-18 Seiko Electronic Components Ltd Thin profile crystal vibrator
JPH01126818A (en) * 1987-11-12 1989-05-18 Seiko Electronic Components Ltd Thin profile crystal resonator
JPH0423326U (en) * 1990-06-18 1992-02-26
JPH0450919U (en) * 1990-08-31 1992-04-28
JPH0459622U (en) * 1990-09-28 1992-05-21
JPH0459623U (en) * 1990-09-28 1992-05-21
JPH0485821U (en) * 1990-11-28 1992-07-27
JPH0485819U (en) * 1990-11-28 1992-07-27
JPH0485820U (en) * 1990-11-28 1992-07-27
JPH0485916U (en) * 1990-11-29 1992-07-27
JP2021034644A (en) * 2019-08-28 2021-03-01 住友電気工業株式会社 Light receiving element

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