JPS5687380A - Semiconductor device for detection of radiant light - Google Patents

Semiconductor device for detection of radiant light

Info

Publication number
JPS5687380A
JPS5687380A JP16456079A JP16456079A JPS5687380A JP S5687380 A JPS5687380 A JP S5687380A JP 16456079 A JP16456079 A JP 16456079A JP 16456079 A JP16456079 A JP 16456079A JP S5687380 A JPS5687380 A JP S5687380A
Authority
JP
Japan
Prior art keywords
type
substrate
leakage current
region
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16456079A
Other languages
Japanese (ja)
Other versions
JPS6035834B2 (en
Inventor
Yoshihito Amamiya
Takayuki Sugata
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54164560A priority Critical patent/JPS6035834B2/en
Publication of JPS5687380A publication Critical patent/JPS5687380A/en
Publication of JPS6035834B2 publication Critical patent/JPS6035834B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To reduce a leakage current at surface by forming N type regions by surrounding a P-N junction section formed at the central section of a P type semiconductor substrate. CONSTITUTION:An N type region 3 is formed at the surface of a P type semiconductor substrate 1 to make a P-N juection and a photodiode is composed. Ohmic electrodes 7 are formed for the N type 3 region to obtain an output from a load resistor 15. N type regions 20 are also provided by surrounding the N type region 3 formed on the substrate 1. And the N type regions 20 are deeply formed than the N type region 3. Furthermore, an electrode 9 is provided at the bottom of the substrate 1 and a bias 16 is connected to the bottom of the substrate 1 to feed light to a depletion layer 17. In this way, a leakage current at surface will be fed to a resistor 26 through an electrode 25 and the leakage current will not present be in the output.
JP54164560A 1979-12-18 1979-12-18 Semiconductor device for radiation detection Expired JPS6035834B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54164560A JPS6035834B2 (en) 1979-12-18 1979-12-18 Semiconductor device for radiation detection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54164560A JPS6035834B2 (en) 1979-12-18 1979-12-18 Semiconductor device for radiation detection

Publications (2)

Publication Number Publication Date
JPS5687380A true JPS5687380A (en) 1981-07-15
JPS6035834B2 JPS6035834B2 (en) 1985-08-16

Family

ID=15795475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54164560A Expired JPS6035834B2 (en) 1979-12-18 1979-12-18 Semiconductor device for radiation detection

Country Status (1)

Country Link
JP (1) JPS6035834B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154579A (en) * 1983-12-20 1985-08-14 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Semiconductor device
JPS61289677A (en) * 1985-06-18 1986-12-19 Nippon Kogaku Kk <Nikon> Semiconductor light detection apparatus
JPH01256179A (en) * 1988-04-06 1989-10-12 Sanken Electric Co Ltd Semiconductor photosensor
JPH02262379A (en) * 1989-03-31 1990-10-25 Toshiba Corp Semiconductor photodetector and manufacture thereof
JP2007335596A (en) * 2006-06-14 2007-12-27 Hamamatsu Photonics Kk Photodiode array
US8362539B2 (en) * 2008-07-28 2013-01-29 Samsung Electronics Co., Ltd. Semiconductor device and semiconductor package including the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3113220A (en) * 1960-09-28 1963-12-03 Frederick S Goulding Guard ring semiconductor junction

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3113220A (en) * 1960-09-28 1963-12-03 Frederick S Goulding Guard ring semiconductor junction

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154579A (en) * 1983-12-20 1985-08-14 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Semiconductor device
JPS61289677A (en) * 1985-06-18 1986-12-19 Nippon Kogaku Kk <Nikon> Semiconductor light detection apparatus
JPH01256179A (en) * 1988-04-06 1989-10-12 Sanken Electric Co Ltd Semiconductor photosensor
JPH02262379A (en) * 1989-03-31 1990-10-25 Toshiba Corp Semiconductor photodetector and manufacture thereof
JP2007335596A (en) * 2006-06-14 2007-12-27 Hamamatsu Photonics Kk Photodiode array
JP4602287B2 (en) * 2006-06-14 2010-12-22 浜松ホトニクス株式会社 Photodiode array
US8362539B2 (en) * 2008-07-28 2013-01-29 Samsung Electronics Co., Ltd. Semiconductor device and semiconductor package including the same

Also Published As

Publication number Publication date
JPS6035834B2 (en) 1985-08-16

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