JPS5687380A - Semiconductor device for detection of radiant light - Google Patents
Semiconductor device for detection of radiant lightInfo
- Publication number
- JPS5687380A JPS5687380A JP16456079A JP16456079A JPS5687380A JP S5687380 A JPS5687380 A JP S5687380A JP 16456079 A JP16456079 A JP 16456079A JP 16456079 A JP16456079 A JP 16456079A JP S5687380 A JPS5687380 A JP S5687380A
- Authority
- JP
- Japan
- Prior art keywords
- type
- substrate
- leakage current
- region
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000001514 detection method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To reduce a leakage current at surface by forming N type regions by surrounding a P-N junction section formed at the central section of a P type semiconductor substrate. CONSTITUTION:An N type region 3 is formed at the surface of a P type semiconductor substrate 1 to make a P-N juection and a photodiode is composed. Ohmic electrodes 7 are formed for the N type 3 region to obtain an output from a load resistor 15. N type regions 20 are also provided by surrounding the N type region 3 formed on the substrate 1. And the N type regions 20 are deeply formed than the N type region 3. Furthermore, an electrode 9 is provided at the bottom of the substrate 1 and a bias 16 is connected to the bottom of the substrate 1 to feed light to a depletion layer 17. In this way, a leakage current at surface will be fed to a resistor 26 through an electrode 25 and the leakage current will not present be in the output.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54164560A JPS6035834B2 (en) | 1979-12-18 | 1979-12-18 | Semiconductor device for radiation detection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54164560A JPS6035834B2 (en) | 1979-12-18 | 1979-12-18 | Semiconductor device for radiation detection |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5687380A true JPS5687380A (en) | 1981-07-15 |
JPS6035834B2 JPS6035834B2 (en) | 1985-08-16 |
Family
ID=15795475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54164560A Expired JPS6035834B2 (en) | 1979-12-18 | 1979-12-18 | Semiconductor device for radiation detection |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6035834B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154579A (en) * | 1983-12-20 | 1985-08-14 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Semiconductor device |
JPS61289677A (en) * | 1985-06-18 | 1986-12-19 | Nippon Kogaku Kk <Nikon> | Semiconductor light detection apparatus |
JPH01256179A (en) * | 1988-04-06 | 1989-10-12 | Sanken Electric Co Ltd | Semiconductor photosensor |
JPH02262379A (en) * | 1989-03-31 | 1990-10-25 | Toshiba Corp | Semiconductor photodetector and manufacture thereof |
JP2007335596A (en) * | 2006-06-14 | 2007-12-27 | Hamamatsu Photonics Kk | Photodiode array |
US8362539B2 (en) * | 2008-07-28 | 2013-01-29 | Samsung Electronics Co., Ltd. | Semiconductor device and semiconductor package including the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3113220A (en) * | 1960-09-28 | 1963-12-03 | Frederick S Goulding | Guard ring semiconductor junction |
-
1979
- 1979-12-18 JP JP54164560A patent/JPS6035834B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3113220A (en) * | 1960-09-28 | 1963-12-03 | Frederick S Goulding | Guard ring semiconductor junction |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154579A (en) * | 1983-12-20 | 1985-08-14 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Semiconductor device |
JPS61289677A (en) * | 1985-06-18 | 1986-12-19 | Nippon Kogaku Kk <Nikon> | Semiconductor light detection apparatus |
JPH01256179A (en) * | 1988-04-06 | 1989-10-12 | Sanken Electric Co Ltd | Semiconductor photosensor |
JPH02262379A (en) * | 1989-03-31 | 1990-10-25 | Toshiba Corp | Semiconductor photodetector and manufacture thereof |
JP2007335596A (en) * | 2006-06-14 | 2007-12-27 | Hamamatsu Photonics Kk | Photodiode array |
JP4602287B2 (en) * | 2006-06-14 | 2010-12-22 | 浜松ホトニクス株式会社 | Photodiode array |
US8362539B2 (en) * | 2008-07-28 | 2013-01-29 | Samsung Electronics Co., Ltd. | Semiconductor device and semiconductor package including the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6035834B2 (en) | 1985-08-16 |
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