JPS5742180A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS5742180A
JPS5742180A JP11893280A JP11893280A JPS5742180A JP S5742180 A JPS5742180 A JP S5742180A JP 11893280 A JP11893280 A JP 11893280A JP 11893280 A JP11893280 A JP 11893280A JP S5742180 A JPS5742180 A JP S5742180A
Authority
JP
Japan
Prior art keywords
layer
type
light emitting
window
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11893280A
Other languages
Japanese (ja)
Other versions
JPS6158993B2 (en
Inventor
Kazuhisa Takahashi
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11893280A priority Critical patent/JPS5742180A/en
Publication of JPS5742180A publication Critical patent/JPS5742180A/en
Publication of JPS6158993B2 publication Critical patent/JPS6158993B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To impart a function of monitoring light emitting output to a light emitting diode itself while effectively utilizing light heretofore usually unused, by limiting a conductive converting portion on the surface of a conductive type blocking layer composing a light emitting diode only to the peripheral part of the exposed section of an inverse type conductive layer. CONSTITUTION:An n type InGaAs light emitting layer 2 is grown on an n type InP substrate 1, and a p type InP layer 3 laid thereon. Additionally, an n type In GaAs blocking layer 9 smaller in the energy gap than the layer 2 is grown to produce a p-n junction 12 between it and the layer 3. Then, a window 5 is etched in the center of the layer 9 and an impurity is diffused near the window 5 and the side surrounding it to form an ohmic layer 10 converted to p type so that a p-n junction 13 is produced between it and the layer 9. Thereafter, a back electrode 8 is coated on the back of the substrate 1, a surface electrode 7 on the layer 10, and the third electrode 11 on the layer 9 respectively. A load resistance 14 is connected between the electrodes 7 and 11. This enables the taking out of light other than from the window 5 thereby permitting the monitoring using an potential difference generated in the resistance 14.
JP11893280A 1980-08-27 1980-08-27 Light emitting diode Granted JPS5742180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11893280A JPS5742180A (en) 1980-08-27 1980-08-27 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11893280A JPS5742180A (en) 1980-08-27 1980-08-27 Light emitting diode

Publications (2)

Publication Number Publication Date
JPS5742180A true JPS5742180A (en) 1982-03-09
JPS6158993B2 JPS6158993B2 (en) 1986-12-13

Family

ID=14748776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11893280A Granted JPS5742180A (en) 1980-08-27 1980-08-27 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS5742180A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6581507B2 (en) 2000-07-14 2003-06-24 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Single-headed piston type swash plate compressor
US8734124B2 (en) 2009-01-30 2014-05-27 Taiho Kogyo Co., Ltd. Swash plate type compressor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414691A (en) * 1977-07-06 1979-02-03 Fujitsu Ltd Liminous semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414691A (en) * 1977-07-06 1979-02-03 Fujitsu Ltd Liminous semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6581507B2 (en) 2000-07-14 2003-06-24 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Single-headed piston type swash plate compressor
US8734124B2 (en) 2009-01-30 2014-05-27 Taiho Kogyo Co., Ltd. Swash plate type compressor

Also Published As

Publication number Publication date
JPS6158993B2 (en) 1986-12-13

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