JPS5742180A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS5742180A JPS5742180A JP11893280A JP11893280A JPS5742180A JP S5742180 A JPS5742180 A JP S5742180A JP 11893280 A JP11893280 A JP 11893280A JP 11893280 A JP11893280 A JP 11893280A JP S5742180 A JPS5742180 A JP S5742180A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- light emitting
- window
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000903 blocking effect Effects 0.000 abstract 2
- 238000012544 monitoring process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To impart a function of monitoring light emitting output to a light emitting diode itself while effectively utilizing light heretofore usually unused, by limiting a conductive converting portion on the surface of a conductive type blocking layer composing a light emitting diode only to the peripheral part of the exposed section of an inverse type conductive layer. CONSTITUTION:An n type InGaAs light emitting layer 2 is grown on an n type InP substrate 1, and a p type InP layer 3 laid thereon. Additionally, an n type In GaAs blocking layer 9 smaller in the energy gap than the layer 2 is grown to produce a p-n junction 12 between it and the layer 3. Then, a window 5 is etched in the center of the layer 9 and an impurity is diffused near the window 5 and the side surrounding it to form an ohmic layer 10 converted to p type so that a p-n junction 13 is produced between it and the layer 9. Thereafter, a back electrode 8 is coated on the back of the substrate 1, a surface electrode 7 on the layer 10, and the third electrode 11 on the layer 9 respectively. A load resistance 14 is connected between the electrodes 7 and 11. This enables the taking out of light other than from the window 5 thereby permitting the monitoring using an potential difference generated in the resistance 14.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11893280A JPS5742180A (en) | 1980-08-27 | 1980-08-27 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11893280A JPS5742180A (en) | 1980-08-27 | 1980-08-27 | Light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5742180A true JPS5742180A (en) | 1982-03-09 |
JPS6158993B2 JPS6158993B2 (en) | 1986-12-13 |
Family
ID=14748776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11893280A Granted JPS5742180A (en) | 1980-08-27 | 1980-08-27 | Light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5742180A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6581507B2 (en) | 2000-07-14 | 2003-06-24 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Single-headed piston type swash plate compressor |
US8734124B2 (en) | 2009-01-30 | 2014-05-27 | Taiho Kogyo Co., Ltd. | Swash plate type compressor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5414691A (en) * | 1977-07-06 | 1979-02-03 | Fujitsu Ltd | Liminous semiconductor device |
-
1980
- 1980-08-27 JP JP11893280A patent/JPS5742180A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5414691A (en) * | 1977-07-06 | 1979-02-03 | Fujitsu Ltd | Liminous semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6581507B2 (en) | 2000-07-14 | 2003-06-24 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Single-headed piston type swash plate compressor |
US8734124B2 (en) | 2009-01-30 | 2014-05-27 | Taiho Kogyo Co., Ltd. | Swash plate type compressor |
Also Published As
Publication number | Publication date |
---|---|
JPS6158993B2 (en) | 1986-12-13 |
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